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H5AN8G6NDJR-VKC PDF预览

H5AN8G6NDJR-VKC

更新时间: 2023-12-06 20:01:43
品牌 Logo 应用领域
海力士 - HYNIX 双倍数据速率
页数 文件大小 规格书
46页 845K
描述
DDR4

H5AN8G6NDJR-VKC 数据手册

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Symbol  
Type  
Function  
Connectivity Test Mode Enable: Required on x16 devices and optional input on x4/x8  
with densities equal to or greater than 8Gb. HIGH in this pin will enable Connectivity Test  
TEN  
Input Mode operation along with other pins. It is a CMOS rail to rail signal with AC high and  
low at 80% and 20% of VDD. Using this signal or not is dependent on System. This pin  
may be DRAM internally pulled low through a weak pull-down resistor to VSS.  
NC  
No Connect: No internal electrical connection is present.  
Supply DQ Power Supply: 1.2 V +/- 0.06 V  
Supply DQ Ground  
VDDQ  
VSSQ  
VDD  
Supply Power Supply: 1.2 V +/- 0.06 V  
Supply Ground  
VSS  
Vpp  
Supply DRAM Activation Power Supply: 2.5V (2.375V min , 2.75 max)  
Supply Reference voltage for CA  
VREFCA  
ZQ  
Supply Reference Pin for ZQ calibration  
Note:  
Input only pins (BG0-BG-1, BA0-BA1, A0-A17, ACT_n, RAS_n,/A16, CAS_n/A15, WE_n/A14, CS_n, CKE, ODT, and  
RESET_n) do not supply termination.  
Rev. 1.4 / Apr.2020  
10