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H11ADB61SDV PDF预览

H11ADB61SDV

更新时间: 2024-11-25 19:01:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 输出元件光电
页数 文件大小 规格书
8页 99K
描述
Transistor Output Optocoupler, 2-Element, 5300V Isolation, SURFACE MOUNT, DIP-8

H11ADB61SDV 技术参数

生命周期:Obsolete包装说明:SURFACE MOUNT, DIP-8
Reach Compliance Code:unknownHTS代码:8541.40.80.00
风险等级:5.64其他特性:UL RECOGNIZED, VDE APPROVED
Coll-Emtr Bkdn Voltage-Min:70 V配置:SEPARATE, 2 CHANNELS
标称电流传输比:50%最大暗电源:100 nA
最大正向电流:0.06 A最大绝缘电压:5300 V
元件数量:2最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER
Base Number Matches:1

H11ADB61SDV 数据手册

 浏览型号H11ADB61SDV的Datasheet PDF文件第2页浏览型号H11ADB61SDV的Datasheet PDF文件第3页浏览型号H11ADB61SDV的Datasheet PDF文件第4页浏览型号H11ADB61SDV的Datasheet PDF文件第5页浏览型号H11ADB61SDV的Datasheet PDF文件第6页浏览型号H11ADB61SDV的Datasheet PDF文件第7页 
8-PIN BI-DIRECTIONAL  
TRANSISTOR OPTOCOUPLER  
H11ADB6  
H11ADB61  
H11ADB62  
DESCRIPTION  
The H11ADB series optocouplers have two channels for high density applications.  
The inverse parallel channel orientation is ideal for applications which require data  
to be both transmitted and received on each side of the isolation boundary. Each  
channel consists of a GaAs LED optically coupled to a silicon NPN phototransistor.  
8
1
FEATURES  
Inverse parallel channel orientation  
8
8
High isolation voltage 5300 VAC RMS-1 minute, 7500 VAC PEAK-1 minute  
1
1
High BV  
minimum 70 volts  
CEO  
SCHEMATIC  
Two isolated channels per package  
Underwriters Laboratory (UL) recognized file #E90700  
ANODE  
COLLECTOR  
1
8
APPLICATIONS  
CATHODE  
EMITTER  
EMITTER  
CATHODE  
2
3
4
7
6
5
AC line/Digital logic  
Digital logic/Digital logic  
COLLECTOR  
ANODE  
ABSOLUTE MAXIMUM RATINGS (No derating required up to 85°C)  
Rating  
EMITTER (Each channel)  
Symbol  
Value  
Unit  
Forward Current - Continuous  
Forward Current - Peak (PW = 1µs, 300pps)  
Reverse Voltage  
I
60  
3.0  
5
mA  
A
F
I (pk)  
F
V
V
R
LED Power Dissipation @ T = 25°C  
Derate above 25°C  
100  
1.33  
mW  
mW/°C  
A
P
D
DETECTOR (Each channel)  
Collector Current - Continuous  
Collector-Emitter Breakdown Voltage  
Emitter-Collector Breakdown Voltage  
I
50  
70  
7
mA  
V
C
BV  
BV  
CEO  
ECO  
V
Detector Power Dissipation @ T = 25°C  
Derate above 25°C  
150  
2.0  
mW  
mW/°C  
A
P
D
TOTAL DEVICE  
Storage Temperature  
T
-55 to +125  
-55 to +100  
°C  
°C  
°C  
STG  
Operating Temperature  
Lead Solder Temperature (wave solder)  
T
OPR  
T
260 for 10 sec  
SOL  
Total Device Power Dissipation @ T = 25°C  
Derate above 25°C  
400  
5.33  
mW  
mW/°C  
A
P
D
© 2003 Fairchild Semiconductor Corporation  
Page 1 of 8  
7/18/03  

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