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H03N60 PDF预览

H03N60

更新时间: 2024-02-22 16:22:31
品牌 Logo 应用领域
HSMC 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
5页 59K
描述
N-Channel Power Field Effect Transistor

H03N60 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:NBase Number Matches:1

H03N60 数据手册

 浏览型号H03N60的Datasheet PDF文件第1页浏览型号H03N60的Datasheet PDF文件第2页浏览型号H03N60的Datasheet PDF文件第3页浏览型号H03N60的Datasheet PDF文件第4页 
Spec. No. : MOS200602  
Issued Date : 2006.02.01  
Revised Date : 2006.02.07  
Page No. : 5/5  
HI-SINCERITY  
MICROELECTRONICS CORP.  
Soldering Methods for HSMC’s Products  
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%  
2. Reflow soldering of surface-mount devices  
Figure 1: Temperature profile  
t
P
Critical Zone  
to T  
TP  
T
L
P
Ramp-up  
TL  
t
L
Tsmax  
Tsmin  
tS  
Preheat  
Ramp-down  
25  
t 25oC to Peak  
Time  
Profile Feature  
Average ramp-up rate (TL to TP)  
Preheat  
Sn-Pb Eutectic Assembly  
<3oC/sec  
Pb-Free Assembly  
<3oC/sec  
- Temperature Min (Tsmin  
)
100oC  
150oC  
150oC  
200oC  
- Temperature Max (Tsmax  
- Time (min to max) (ts)  
Tsmax to TL  
)
60~120 sec  
60~180 sec  
- Ramp-up Rate  
<3oC/sec  
<3oC/sec  
Time maintained above:  
- Temperature (TL)  
- Time (tL)  
183oC  
217oC  
60~150 sec  
240oC +0/-5oC  
60~150 sec  
260oC +0/-5oC  
Peak Temperature (TP)  
Time within 5oC of actual Peak  
10~30 sec  
20~40 sec  
Temperature (tP)  
Ramp-down Rate  
<6oC/sec  
<6oC/sec  
Time 25oC to Peak Temperature  
<6 minutes  
<8 minutes  
3. Flow (wave) soldering (solder dipping)  
Products  
Pb devices.  
Peak temperature  
245oC ±5oC  
Dipping time  
10sec ±1sec  
10sec ±1sec  
260oC ±5oC  
Pb-Free devices.  
H03N60E, H03N60F  
HSMC Product Specification  

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