Datasheet > H03N60

H03N60

更新时间： 2024-02-09 04:49:25

品牌	Logo	应用领域
HSMC		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
5页	59K
描述
N-Channel Power Field Effect Transistor

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技术参数
数据手册

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H03N60 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

H03N60 数据手册

Spec. No. : MOS200602

Issued Date : 2006.02.01

Revised Date : 2006.02.07

Page No. : 3/5

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

On-Region Characteristic

Capacitance Characteristics

1000

800

600

400

200

=10V

=8V

=6V

=5V

Ciss

Crss

Coss

=4V

0.1

, Deain-Source Voltage (V)

100

, Drain-Source Voltage (V)

Typical On-Resistance & Drain Current

Drain Current Variation with

Gate Voltage and Temperature

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

=10 V

T = 25 C

=10V

0.0

1.0

2.0

3.0

4.0

, Gate-Source Voltage (V)

5.0

6.0

7.0

8.0

I , Drain Current (A)

Gate Charge Waveforms

Maximum Safe Operating Area

V =200V

1ms

10ms

100ms

0.1

100

, Drain-Source Voltage (V)

1000

Q, Gate Charge (nC)

H03N60E, H03N60F

HSMC Product Specification

1 234 5

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