Spec. No. : MOS200602
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 2/5
HI-SINCERITY
MICROELECTRONICS CORP.
Thermal Characteristics
Symbol
Parameter
Value
62.5
Units
TO-220AB
TO-220FP
2
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
RθJC
°C/W
°C/W
3.3
RθJA
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
V(BR)DSS
Characteristic
Min.
Typ. Max.
Unit
V
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=600V, VGS=0V)
Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C)
Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)
Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
600
-
-
-
-
-
-
-
2
-
1
-
-
-
-
-
-
-
-
-
-
1
uA
uA
nA
nA
V
IDSS
-
50
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
-
100
-
-100
-
4
4
-
Static Drain-Source On-Resistance (VGS=10V, ID=1.5A)*
Forward Transconductance (VDS≥50V, ID=1.5A)*
Input Capacitance
-
Ω
-
mhos
Ciss
Coss
Crss
td(on)
tr
465
66
13
12
21
30
24
18
5
-
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
VGS=0V, VDS=25V, f=1MHz
-
pF
ns
-
-
-
(VDD=300V, ID=3A, RG=18Ω,
VGS=10V)*
td(off)
tf
Turn-off Delay Time
Fall Time
-
-
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
30
-
Qgs
(VDS=300V, ID=3A, VGS=10V)*
nC
Qgd
12
-
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
LD
LS
-
-
4.5
7.5
-
-
nH
nH
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Source-Drain Diode
Symbol
Characteristic
IS=3A, VGS=0V, TJ=25oC
Min.
Typ. Max. Units
VSD
ton
trr
Forward On Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
-
-
-
-
1.6
V
**
-
-
ns
ns
IS=3A, VGS=0V, dIS/dt=100A/us
340
**: Negligible, Dominated by circuit inductance
H03N60E, H03N60F
HSMC Product Specification