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GUF10M-E PDF预览

GUF10M-E

更新时间: 2024-11-28 07:02:15
品牌 Logo 应用领域
海湾 - GULFSEMI 开关
页数 文件大小 规格书
2页 130K
描述
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE: 200V to 1000V CURRENT: 1.0A

GUF10M-E 技术参数

生命周期:Contact Manufacturer包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.09其他特性:LOW POWER LOSS
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大重复峰值反向电压:1000 V最大反向恢复时间:0.075 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

GUF10M-E 数据手册

 浏览型号GUF10M-E的Datasheet PDF文件第2页 
GUF10D-E THRU GUF10M-E  
SINTERED GLASS JUNCTION  
FAST SWITCHING PLASTIC RECTIFIER  
VOLTAGE: 200V to 1000V  
CURRENT: 1.0A  
DO-41\DO-204AL  
FEATURE  
High temperature metallurgically bonded construction  
Sintered glass cavity free junction  
Capability of meeting environmental standard of  
MIL-S-19500  
High temperature soldering guaranteed  
350°C /10sec/0.375”lead length at 5 lbs tension  
Operate at Ta =55°C with no thermal run away  
Typical Ir<0.2µA  
Low power loss, high efficient  
Halogen Free  
MECHANICAL DATA  
Terminal: Plated axial leads solderable per MIL-STD 202E,  
method 208C  
Case: Molded with UL-94 Class V-0 recognized Halogen  
Free Epoxy  
Polarity: color band denotes cathode  
Mounting position: any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)  
SYMBOL  
GUF10D-E  
GUF10G-E  
GUF10K-E  
GUF10M-E  
units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Vrrm  
Vrms  
Vdc  
200  
140  
200  
400  
280  
400  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking Voltage  
1000  
Maximum Average Forward Rectified  
Current 3/8”lead length at Ta =55°C  
Peak Forward Surge Current 8.3ms single  
half sine-wave superimposed on rated load  
Maximum Forward Voltage at rated Forward  
Current and 25°C  
If(av)  
Ifsm  
Vf  
1.0  
30  
A
A
1.1  
1.4  
1.7  
V
Maximum full load reverse current full cycle  
average at 55°C Ambient  
Ir(av)  
50  
µA  
5.0  
50  
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25°C  
Ta =125°C  
Ir  
µA  
Maximum Reverse Recovery Time (Note 1)  
Trr  
Cj  
50  
17  
75  
15  
nS  
pF  
Typical Junction Capacitance  
Typical Thermal Resistance  
(Note 2)  
(Note 3)  
Rth(ja)  
Tstg, Tj  
50  
°C /W  
°C  
Storage and Operating Temperature Range  
Note:  
-65 to +175  
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc  
3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted  
Rev.A1  
www.gulfsemi.com  

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