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GTZ8.2-GS18 PDF预览

GTZ8.2-GS18

更新时间: 2024-11-22 06:08:27
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
5页 123K
描述
DIODE 8.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, LEAD FREE, PLASTIC PACKAGE-2, Voltage Regulator Diode

GTZ8.2-GS18 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.42配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:30 ΩJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.2 W认证状态:Not Qualified
标称参考电压:8.2 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
最大电压容差:5.37%工作测试电流:5 mA
Base Number Matches:1

GTZ8.2-GS18 数据手册

 浏览型号GTZ8.2-GS18的Datasheet PDF文件第2页浏览型号GTZ8.2-GS18的Datasheet PDF文件第3页浏览型号GTZ8.2-GS18的Datasheet PDF文件第4页浏览型号GTZ8.2-GS18的Datasheet PDF文件第5页 
GTZ-V-Series  
Vishay Semiconductors  
Small Signal Zener Diodes  
Features  
• Silicon Planar Power Zener Diodes  
• Low Zener impedence and low leakage  
current  
e3  
• Popular in Asian designs  
• Compact surface mount device  
• Ideal for automated mounting  
17431  
• Complies with IEC 61000-4-2 for ESD protection  
Mechanical Data  
Case: SOD-323 Plastic case  
Weight: approx. 5.0 mg  
Packaging Codes/Options:  
GS18/ 10 k per 13 " reel (8 mm tape), 10 k/box  
GS08/ 3 k per 7 " reel ( 8 mm tape), 15 k/box  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Power dissipation  
Test condition  
Symbol  
Ptot  
Value  
200  
Unit  
mW  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Tj  
Value  
150  
Unit  
°C  
Junction temperature  
Storage temperature range  
Tstg  
- 55 to + 150  
°C  
Document Number 85767  
Rev. 1.4, 10-Mar-05  
www.vishay.com  
1

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