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GTZ10/D6 PDF预览

GTZ10/D6

更新时间: 2024-11-21 17:56:27
品牌 Logo 应用领域
威世 - VISHAY 测试二极管
页数 文件大小 规格书
5页 124K
描述
Zener Diode, 10V V(Z), 5.5%, 0.2W,

GTZ10/D6 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.8
配置:SINGLE二极管类型:ZENER DIODE
最大动态阻抗:30 ΩJESD-609代码:e3
元件数量:1最高工作温度:150 °C
最大功率耗散:0.2 W标称参考电压:10 V
子类别:Voltage Reference Diodes表面贴装:YES
端子面层:Matte Tin (Sn)最大电压容差:5.5%
工作测试电流:5 mABase Number Matches:1

GTZ10/D6 数据手册

 浏览型号GTZ10/D6的Datasheet PDF文件第2页浏览型号GTZ10/D6的Datasheet PDF文件第3页浏览型号GTZ10/D6的Datasheet PDF文件第4页浏览型号GTZ10/D6的Datasheet PDF文件第5页 
GTZ-V-Series  
Vishay Semiconductors  
Small Signal Zener Diodes  
Features  
• Silicon Planar Power Zener Diodes  
• Low Zener impedence and low leakage  
current  
e3  
• Popular in Asian designs  
• Compact surface mount device  
• Ideal for automated mounting  
17431  
• Complies with IEC 61000-4-2 for ESD protection  
Mechanical Data  
Case: SOD-323 Plastic case  
Weight: approx. 5.0 mg  
Packaging Codes/Options:  
GS18/ 10 k per 13 " reel (8 mm tape), 10 k/box  
GS08/ 3 k per 7 " reel ( 8 mm tape), 15 k/box  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Power dissipation  
Test condition  
Symbol  
Ptot  
Value  
200  
Unit  
mW  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Tj  
Value  
150  
Unit  
°C  
Junction temperature  
Storage temperature range  
Tstg  
- 55 to + 150  
°C  
Document Number 85767  
Rev. 1.4, 10-Mar-05  
www.vishay.com  
1

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