Datasheet > GTRB204402FC

GTRB204402FC

更新时间： 2024-03-03 10:09:54

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
10页	904K
描述
High Power RF GaN-on-SiC HEMT 350 W, 48 V, 1930 - 2020 MHz

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GTRB204402FC 数据手册

GTRB204402FC/1

RF Characteristics

Single-carrier WCDMA Speciﬁcations (tested in the Doherty production test ﬁxture)

V_DD= 48 V, I_DQ= 150 mA, P_OUT= 56.2 W avg, V_GS(PEAK)= –5.5 V, ƒ = 2020 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @

0.01% CCDF

Characteristic

Symbol

G_ps

Min.

Typ.

Max.

—

Unit

Gain

Drain Efficiency

h_D

38.5

—

Adjacent Channel Power Ratio

Output PAR @ 0.01% CCDF

ACPR

OPAR

–33

7.8

–29

—

dBc

7.3

Note:

All published data at T_CASE= 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Ordering Information

Type and Version

Order Code

Package Description

H-37248C-4

Shipping

GTRB204402FC/1 V1 R0

GTRB204402FC/1 V1 R2

GTRB204402FC1V1-R0

GTRB204402FC1V1-R2

Tape & Reel, 50 pcs

Tape & Reel, 250 pcs

H-37248C-4

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 02.1, 2022-09-18

For further information and support please visit:

https://www.macom.com/support

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