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GSIB1580N-M3/45 PDF预览

GSIB1580N-M3/45

更新时间: 2024-11-25 19:49:39
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 87K
描述
DIODE 3.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode

GSIB1580N-M3/45 技术参数

生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.64
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):0.95 V
JESD-30 代码:R-PSFM-T4最大非重复峰值正向电流:300 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:800 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

GSIB1580N-M3/45 数据手册

 浏览型号GSIB1580N-M3/45的Datasheet PDF文件第2页浏览型号GSIB1580N-M3/45的Datasheet PDF文件第3页浏览型号GSIB1580N-M3/45的Datasheet PDF文件第4页 
GSIB1520N, GSIB1540N, GSIB1560N, GSIB1580N  
www.vishay.com  
Vishay General Semiconductor  
Single-Phase Single In-Line Bridge Rectifiers  
FEATURES  
• UL recognition file number E54214  
• Thin single in-Iine package  
• Glass passivated chip junction  
• High surge current capability  
• High case dielectric strength of 2500 VRMS  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
~
~
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
~
Case Style GSIB-5S  
~
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave rectification  
for switching power supply, home appliances, office  
equipment, industrial automation applications.  
PRIMARY CHARACTERISTICS  
Package  
GSIB-5S  
15 A  
MECHANICAL DATA  
Case: GSIB-5S  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
VRRM  
IFSM  
200 V, 400 V, 600 V, 800 V  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
300 A  
10 μA  
commercial grade  
IR  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
VF at IF = 7.5 A  
TJ max.  
0.95 V  
150 °C  
In-Line  
Diode variations  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum  
Recommended Torque: 5.7 cm-kg (5 in-lbs)  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL GSIB1520N GSIB1540N GSIB1560N GSIB1580N  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
V
V
V
Maximum DC blocking voltage  
(1)  
T
C = 107 °C  
IF(AV)  
15  
Maximum average forward rectified  
output current at  
A
A
(2)  
TA = 25 °C  
IF(AV)  
3.5  
Peak forward surge current single sine-wave  
IFSM  
300  
240  
superimposed on rated load  
Rating for fusing (t < 8.3 ms)  
I2t  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Notes  
(1)  
Unit case mounted on aluminum plate heatsink  
Units mounted on PCB without heatsink  
(2)  
Revision: 26-Jun-13  
Document Number: 89387  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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