Datasheet > GS8662T18BGD-167I

GS8662T18BGD-167I

更新时间： 2024-11-27 14:42:23

品牌	Logo	应用领域
GSI		双倍数据速率静态存储器内存集成电路
页数	文件大小	规格书
37页	1280K
描述
DDR SRAM, 4MX18, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

GS8662T18BGD-167I 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
针数：	165	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.B	HTS代码：	8542.32.00.41
风险等级：	5.69	Is Samacsys：	N
最长访问时间：	0.5 ns	其他特性：	PIPELINED ARCHITECTURE, LATE WRITE
JESD-30 代码：	R-PBGA-B165	JESD-609代码：	e1
长度：	15 mm	内存密度：	75497472 bit
内存集成电路类型：	DDR SRAM	内存宽度：	18
湿度敏感等级：	3	功能数量：	1
端子数量：	165	字数：	4194304 words
字数代码：	4000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	4MX18	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	13 mm	Base Number Matches：	1

GS8662T18BGD-167I 数据手册

浏览型号GS8662T18BGD-167I的Datasheet PDF文件第2页

浏览型号GS8662T18BGD-167I的Datasheet PDF文件第3页

浏览型号GS8662T18BGD-167I的Datasheet PDF文件第4页

浏览型号GS8662T18BGD-167I的Datasheet PDF文件第5页

浏览型号GS8662T18BGD-167I的Datasheet PDF文件第6页

浏览型号GS8662T18BGD-167I的Datasheet PDF文件第7页

Preliminary

GS8662T08/09/18/36BD-400/350/333/300/250

400 MHz–250 MHz

165-Bump BGA

Commercial Temp

Industrial Temp

72Mb SigmaDDR-II^TM

Burst of 2 SRAM

1.8 V V

1.8 V and 1.5 V I/O

Features

• Simultaneous Read and Write SigmaDDR™ Interface

• Common I/O bus

• JEDEC-standard pinout and package

• Double Data Rate interface

• Byte Write (x36, x18 and x9) and Nybble Write (x8) function

• Burst of 2 Read and Write

• 1.8 V +100/–100 mV core power supply

• 1.5 V or 1.8 V HSTL Interface

• Pipelined read operation with self-timed Late Write

• Fully coherent read and write pipelines

• ZQ pin for programmable output drive strength

• IEEE 1149.1 JTAG-compliant Boundary Scan

• Pin-compatible with present 9Mb, 18Mb, 36Mb and 72Mb

devices

Bottom View

• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package

• RoHS-compliant 165-bump BGA package available

165-Bump, 13 mm x 15 mm BGA

1 mm Bump Pitch, 11 x 15 Bump Array

SigmaDDR™ Family Overview

clock inputs, not differential inputs. If the C clocks are tied

high, the K clocks are routed internally to fire the output

registers instead.

The GS8662T08/09/18/36BD are built in compliance with the

SigmaDDR-II SRAM pinout standard for Common I/O

synchronous SRAMs. They are 75,497,472-bit (72Mb)

SRAMs. The GS8662T08/09/18/36BD SigmaDDR-II SRAMs

are just one element in a family of low power, low voltage

HSTL I/O SRAMs designed to operate at the speeds needed to

implement economical high performance networking systems.

Common I/O x36 and x18 SigmaDDR-II B2 RAMs always

transfer data in two packets. When a new address is loaded, A0

presets an internal 1 bit address counter. The counter

increments by 1 (toggles) for each beat of a burst of two data

transfer.

Clocking and Addressing Schemes

The GS8662T08/09/18/36BD SigmaDDR-II SRAMs are

synchronous devices. They employ two input register clock

inputs, K and K. K and K are independent single-ended clock

inputs, not differential inputs to a single differential clock input

buffer. The device also allows the user to manipulate the

output register clock inputs quasi independently with the C and

C clock inputs. C and C are also independent single-ended

Common I/O x8 and x9 SigmaDDR-II B2 RAMs always

transfer data in two packets. When a new address is loaded,

the LSB is internally set to 0 for the first read or write transfer,

and incremented by 1 for the next transfer. Because the LSB

is tied off internally, the address field of a x8/x9 SigmaDDR-II

B4 RAM is always one address pin less than the advertised

index depth (e.g., the 8M x 8 has a 4M addressable index).

Parameter Synopsis

-400

2.5 ns

0.45 ns

-350

2.86 ns

0.45 ns

-333

3.0 ns

0.45 ns

-300

3.3 ns

0.45 ns

-250

4.0 ns

0.45 ns

tKHKH

tKHQV

Rev: 1.01 11/2010

1/37

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...37

中文翻译

下载PDF

与GS8662T18BGD-167I相关器件

型号	品牌	获取价格	描述	数据表
GS8662T18BGD-200I	GSI	获取价格	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
GS8662T18BGD-200IT	GSI	获取价格	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
GS8662T18BGD-250	GSI	获取价格	165 BGA
GS8662T18BGD-250I	GSI	获取价格	165 BGA
GS8662T18BGD-300	GSI	获取价格	165 BGA
GS8662T18BGD-300I	GSI	获取价格	165 BGA
GS8662T18BGD-333	GSI	获取价格	165 BGA
GS8662T18BGD-333I	GSI	获取价格	165 BGA
GS8662T18BGD-400	GSI	获取价格	165 BGA
GS8662T18BGD-400I	GSI	获取价格	165 BGA

与GS8662T18BGD-167I相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

64
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

GS8662T18BGD-167I

GS8662T18BGD-167I 技术参数

GS8662T18BGD-167I 数据手册

与GS8662T18BGD-167I相关器件

与GS8662T18BGD-167I相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GS8662T18BGD-167I

GS8662T18BGD-167I 技术参数

GS8662T18BGD-167I 数据手册

与GS8662T18BGD-167I相关器件

与GS8662T18BGD-167I相关文章

您还可以找

您在本页遇到什么问题？