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GS8662QT37BGD-300I PDF预览

GS8662QT37BGD-300I

更新时间: 2024-02-23 09:05:13
品牌 Logo 应用领域
GSI 静态存储器内存集成电路
页数 文件大小 规格书
28页 501K
描述
72Mb SigmaQuad-IITM Burst of 2 SRAM

GS8662QT37BGD-300I 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:BGA
包装说明:LBGA,针数:165
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41Factory Lead Time:8 weeks
风险等级:5.21最长访问时间:0.45 ns
其他特性:PIPELINED ARCHITECTUREJESD-30 代码:R-PBGA-B165
JESD-609代码:e1长度:15 mm
内存密度:75497472 bit内存集成电路类型:QDR SRAM
内存宽度:36湿度敏感等级:3
功能数量:1端子数量:165
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX36
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
座面最大高度:1.4 mm最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:13 mmBase Number Matches:1

GS8662QT37BGD-300I 数据手册

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GS8662QT07/10/19/37BD-357/333/300/250/200  
357 MHz–200 MHz  
72Mb SigmaQuad-II+TM  
Burst of 2 SRAM  
165-Bump BGA  
Commercial Temp  
Industrial Temp  
1.8 V V  
DD  
1.8 V and 1.5 V I/O  
are just one element in a family of low power, low voltage  
HSTL I/O SRAMs designed to operate at the speeds needed to  
implement economical high performance networking systems.  
Features  
• 2.0 Clock Latency  
• Simultaneous Read and Write SigmaQuad™ Interface  
• JEDEC-standard pinout and package  
• Dual Double Data Rate interface  
• Byte Write controls sampled at data-in time  
• Dual-Range On-Die Termination (ODT) on Data (D), Byte  
Write (BW), and Clock (K, K) inputs  
• Burst of 2 Read and Write  
• 1.8 V +100/–100 mV core power supply  
• 1.5 V or 1.8 V HSTL Interface  
Clocking and Addressing Schemes  
The GS8662QT07/10/19/37BD SigmaQuad-II+ SRAMs are  
synchronous devices. They employ two input register clock  
inputs, K and K. K and K are independent single-ended clock  
inputs, not differential inputs to a single differential clock input  
buffer.  
• Pipelined read operation  
• Fully coherent read and write pipelines  
• ZQ pin for programmable output drive strength  
• Data Valid Pin (QVLD) Support  
• IEEE 1149.1 JTAG-compliant Boundary Scan  
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package  
• RoHS-compliant 165-bump BGA package available  
Each internal read and write operation in a SigmaQuad-II+ B2  
RAM is two times wider than the device I/O bus. An input data  
bus de-multiplexer is used to accumulate incoming data before  
it is simultaneously written to the memory array. An output  
data multiplexer is used to capture the data produced from a  
single memory array read and then route it to the appropriate  
output drivers as needed. Therefore the address field of a  
SigmaQuad-II+ B2 RAM is always one address pin less than  
the advertised index depth (e.g., the 8M x 8 has an 4M  
addressable index).  
SigmaQuadFamily Overview  
The GS8662QT07/10/19/37BD are built in compliance with  
the SigmaQuad-II+ SRAM pinout standard for Separate I/O  
synchronous SRAMs. They are 75,497,472-bit (72Mb)  
SRAMs. The GS8662QT07/10/19/37BD SigmaQuad SRAMs  
Parameter Synopsis  
-357  
2.8 ns  
0.45 ns  
-333  
3.0 ns  
0.45 ns  
-300  
3.3 ns  
0.45 ns  
-250  
4.0 ns  
0.45 ns  
-200  
5.0 ns  
0.45 ns  
tKHKH  
tKHQV  
Rev: 1.00b 8/2017  
1/28  
© 2011, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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