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GS8321Z32AGD-250IVT PDF预览

GS8321Z32AGD-250IVT

更新时间: 2024-02-08 06:14:15
品牌 Logo 应用领域
GSI 时钟静态存储器内存集成电路
页数 文件大小 规格书
31页 465K
描述
ZBT SRAM, 1MX32, 5.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

GS8321Z32AGD-250IVT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:BGA
包装说明:LBGA, BGA165,11X15,40针数:165
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.14
最长访问时间:5.5 ns其他特性:ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH
最大时钟频率 (fCLK):250 MHzI/O 类型:COMMON
JESD-30 代码:R-PBGA-B165JESD-609代码:e1
长度:15 mm内存密度:33554432 bit
内存集成电路类型:ZBT SRAM内存宽度:32
湿度敏感等级:3功能数量:1
端子数量:165字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX32输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装等效代码:BGA165,11X15,40封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:1.8/2.5 V
认证状态:Not Qualified座面最大高度:1.4 mm
最大待机电流:0.04 A最小待机电流:1.7 V
子类别:SRAMs最大压摆率:0.24 mA
最大供电电压 (Vsup):2 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:13 mm
Base Number Matches:1

GS8321Z32AGD-250IVT 数据手册

 浏览型号GS8321Z32AGD-250IVT的Datasheet PDF文件第2页浏览型号GS8321Z32AGD-250IVT的Datasheet PDF文件第3页浏览型号GS8321Z32AGD-250IVT的Datasheet PDF文件第4页浏览型号GS8321Z32AGD-250IVT的Datasheet PDF文件第6页浏览型号GS8321Z32AGD-250IVT的Datasheet PDF文件第7页浏览型号GS8321Z32AGD-250IVT的Datasheet PDF文件第8页 
GS8321Z18/32/36AD-xxxV  
GS8321Z18/32/36AD-xxxV 165-Bump BGA Pin Description  
Symbol  
A0, A1  
An  
Type  
Description  
I
I
Address field LSBs and Address Counter Preset Inputs  
Address Inputs  
DQA  
DQB  
DQC  
DQD  
I/O  
Data Input and Output pins  
BA, BB, BC, BD  
I
I
Byte Write Enable for DQA, DQB, DQC, DQD I/Os; active low  
Clock Input Signal; active high  
Clock Enable; active low  
CK  
CKE  
W
I
I
Write Enable; active low  
E1  
I
Chip Enable; active low  
E3  
I
Chip Enable; active low  
E2  
I
Chip Enable; active high  
FT  
I
Flow Through / Pipeline Mode Control  
Output Enable; active low  
Burst address counter advance enable; active high  
Sleep mode control; active high  
Linear Burst Order mode; active low  
Scan Test Mode Select  
G
I
ADV  
ZZ  
I
I
LBO  
TMS  
TDI  
TDO  
TCK  
MCH  
I
I
I
Scan Test Data In  
O
I
Scan Test Data Out  
Scan Test Clock  
I
Must Connect High  
V
Core power supply  
DD  
V
I
I
I/O and Core Ground  
Output driver power supply  
No Connect  
SS  
V
DDQ  
NC  
Rev: 1.03 8/2013  
5/31  
© 2011, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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