Datasheet > 存储 > SRAM> GS8320Z36T-200I

GS8320Z36T-200I

更新时间： 2024-01-17 11:38:51

品牌	Logo	应用领域
GSI		存储内存集成电路静态存储器
页数	文件大小	规格书
24页	452K
描述
36Mb Pipelined and Flow Through Synchronous NBT SRAMs

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GS8320Z36T-200I 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	QFP	包装说明：	LQFP,
针数：	100	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.B	HTS代码：	8542.32.00.41
风险等级：	5.3	最长访问时间：	6.5 ns
其他特性：	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	JESD-30 代码：	R-PQFP-G100
长度：	20 mm	内存密度：	37748736 bit
内存集成电路类型：	ZBT SRAM	内存宽度：	36
功能数量：	1	端子数量：	100
字数：	1048576 words	字数代码：	1000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	1MX36
封装主体材料：	PLASTIC/EPOXY	封装代码：	LQFP
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	座面最大高度：	1.6 mm
最大供电电压 (Vsup)：	2 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	14 mm	Base Number Matches：	1

GS8320Z36T-200I 数据手册

Preliminary

GS8320Z18/36T-250/225/200/166/150/133

250 MHz–133 MHz

100-Pin TQFP

Commercial Temp

Industrial Temp

36Mb Pipelined and Flow Through

Synchronous NBT SRAMs

2.5 V or 3.3 V V

2.5 V or 3.3 V I/O

Because it is a synchronous device, address, data inputs, and

read/ write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

rail for proper operation. Asynchronous inputs include the

Sleep mode enable (ZZ) and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

Features

• NBT (No Bus Turn Around) functionality allows zero wait

read-write-read bus utilization; Fully pin-compatible with

both pipelined and flow through NtRAM™, NoBL™ and

ZBT™ SRAMs

• 2.5 V or 3.3 V +10%/–10% core power supply

• 2.5 V or 3.3 V I/O supply

• User-configurable Pipeline and Flow Through mode

• LBO pin for Linear or Interleave Burst mode

• Pin compatible with 2Mb, 4Mb, 8Mb, and 16Mb devices

• Byte write operation (9-bit Bytes)

• 3 chip enable signals for easy depth expansion

• ZZ Pin for automatic power-down

• JEDEC-standard 100-lead TQFP package

• Pb-Free 100-lead TQFP package available

The GS8320Z18/36T may be configured by the user to operate

in Pipeline or Flow Through mode. Operating as a pipelined

synchronous device, meaning that in addition to the rising edge

triggered registers that capture input signals, the device

incorporates a rising-edge-triggered output register. For read

cycles, pipelined SRAM output data is temporarily stored by

the edge triggered output register during the access cycle and

then released to the output drivers at the next rising edge of

clock.

Functional Description

The GS8320Z18/36T is a 36Mbit Synchronous Static SRAM.

GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other

pipelined read/double late write or flow through read/single

late write SRAMs, allow utilization of all available bus

bandwidth by eliminating the need to insert deselect cycles

when the device is switched from read to write cycles.

The GS8320Z18/36T is implemented with GSI's high

performance CMOS technology and is available in a JEDEC-

standard 100-pin TQFP package.

Parameter Synopsis

-250 -225 -200 -166 -150 -133 Unit

2.5 2.7 3.0 3.5 3.8 4.0 ns

4.0 4.4 5.0 6.0 6.6 7.5 ns

Pipeline

3-1-1-1

tCycle

Curr (x18) 285 265 245 220 210 185 mA

Curr (x32/x36) 350 320 295 260 240 215 mA

6.5 7.0 7.5 8.0 8.5 8.5 ns

Flow

Through

2-1-1-1

tCycle

Curr (x18) 205 195 185 175 165 155 mA

Curr (x32/x36) 235 225 210 200 190 175 mA

Rev: 1.03 10/2004

1/24

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...24

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与GS8320Z36T-200I相关器件

型号	品牌	描述	获取价格	数据表
GS8320Z36T-200IT	ETC	36Mb Pipelined and Flow Through Synchronous NBT SRAM	获取价格
GS8320Z36T-200IV	GSI	36Mb Pipelined and Flow Through Synchronous NBT SRAMs	获取价格
GS8320Z36T-200T	ETC	36Mb Pipelined and Flow Through Synchronous NBT SRAM	获取价格
GS8320Z36T-200V	GSI	36Mb Pipelined and Flow Through Synchronous NBT SRAMs	获取价格
GS8320Z36T-225	GSI	36Mb Pipelined and Flow Through Synchronous NBT SRAMs	获取价格
GS8320Z36T-225I	GSI	36Mb Pipelined and Flow Through Synchronous NBT SRAMs	获取价格

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