Datasheet > GS8128418GB-200

GS8128418GB-200

更新时间： 2024-11-28 13:47:55

品牌	Logo	应用领域
GSI		/
页数	文件大小	规格书
30页	660K
描述
119 BGA

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

GS8128418GB-200 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	BGA
包装说明：	BGA,	针数：	119
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.B
HTS代码：	8542.32.00.41	风险等级：	5.19
最长访问时间：	7.5 ns	其他特性：	PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY
JESD-30 代码：	R-PBGA-B119	JESD-609代码：	e1
长度：	22 mm	内存密度：	150994944 bit
内存集成电路类型：	CACHE SRAM	内存宽度：	18
湿度敏感等级：	3	功能数量：	1
端子数量：	119	字数：	8388608 words
字数代码：	8000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	8MX18	封装主体材料：	PLASTIC/EPOXY
封装代码：	BGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	认证状态：	Not Qualified
座面最大高度：	1.99 mm	最大供电电压 (Vsup)：	2.7 V
最小供电电压 (Vsup)：	2.3 V	标称供电电压 (Vsup)：	2.5 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：	BALL	端子节距：	1.27 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	14 mm	Base Number Matches：	1

GS8128418GB-200 数据手册

GS8128418/36B-250/200/167

119-BGA

Commercial Temp

Industrial Temp

250 MHz–167 MHz

8M x 18,4M x 36

144Mb S/DCD Sync Burst SRAMs

2.5 V or 3.3 V V

2.5 V or 3.3 V I/O

either linear or interleave order with the Linear Burst Order (LBO)

input. The Burst function need not be used. New addresses can be

loaded on every cycle with no degradation of chip performance.

Features

• FT pin for user-configurable flow through or pipeline operation

• Single/Dual Cycle Deselect selectable

• IEEE 1149.1 JTAG-compatible Boundary Scan

• ZQ mode pin for user-selectable high/low output drive

• 2.5 V +10%/–10% core power supply

• 3.3 V +10%/–10% core power supply

• 2.5 V or 3.3 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to SCD x18/x36 Interleaved Pipeline mode

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

Flow Through/Pipeline Reads

The function of the Data Output register can be controlled by the

user via the FT mode . Holding the FT mode pin low places the

RAM in Flow Through mode, causing output data to bypass the

Data Output Register. Holding FT high places the RAM in

Pipeline mode, activating the rising-edge-triggered Data Output

SCD and DCD Pipelined Reads

The GS8128418/36 is a SCD (Single Cycle Deselect) and DCD

(Dual Cycle Deselect) pipelined synchronous SRAM. DCD

SRAMs pipeline disable commands to the same degree as read

commands. SCD SRAMs pipeline deselect commands one stage

less than read commands. SCD RAMs begin turning off their

outputs immediately after the deselect command has been

captured in the input registers. DCD RAMs hold the deselect

command for one full cycle and then begin turning off their

outputs just after the second rising edge of clock. The user may

configure this SRAM for either mode of operation using the SCD

mode input.

• ZZ pin for automatic power-down

• JEDEC-standard 119-bump BGA package

• RoHS-compliant 119-bump BGA packages available

Functional Description

Applications

The GS8128418/36 is a 150,994,944-bit high performance

synchronous SRAM with a 2-bit burst address counter. Although

of a type originally developed for Level 2 Cache applications

supporting high performance CPUs, the device now finds

application in synchronous SRAM applications, ranging from

DSP main store to networking chip set support.

Byte Write and Global Write

Byte write operation is performed by using Byte Write enable

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write control

inputs.

Controls

Addresses, data I/Os, chip enable (E1), address burst control

inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,

GW) are synchronous and are controlled by a positive-edge-

triggered clock input (CK). Output enable (G) and power down

control (ZZ) are asynchronous inputs. Burst cycles can be initiated

with either ADSP or ADSC inputs. In Burst mode, subsequent

burst addresses are generated internally and are controlled by

ADV. The burst address counter may be configured to count in

FLXDrive™

The ZQ pin allows selection between high drive strength (ZQ low)

for multi-drop bus applications and normal drive strength (ZQ

floating or high) point-to-point applications. See the Output Driver

Characteristics chart for details.

Parameter Synopsis

-250

-200

-167

Unit

t_KQ(x18/x36)

tCycle

2.5

4.0

3.0

5.0

3.4

6.0

Pipeline

3-1-1-1

Curr (x18)

Curr (x36)

480

550

420

480

385

430

t_KQ

6.5

7.5

8.0

tCycle

Flow Through

2-1-1-1

Curr (x18)

Curr (x36)

370

405

340

370

330

360

Rev: 1.03 7/2010

1/30

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...30

中文翻译

下载PDF

与GS8128418GB-200相关器件

型号	品牌	获取价格	描述	数据表
GS8128418GB-200I	GSI	获取价格	119 BGA
GS8128418GB-200IV	GSI	获取价格	119 BGA
GS8128418GB-200IVT	GSI	获取价格	Cache SRAM, 8MX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-
GS8128418GB-200V	GSI	获取价格	119 BGA
GS8128418GB-200VT	GSI	获取价格	Cache SRAM, 8MX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-
GS8128418GB-250	GSI	获取价格	119 BGA
GS8128418GB-250I	GSI	获取价格	119 BGA
GS8128418GB-250T	GSI	获取价格	Cache SRAM, 8MX18, 6.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-
GS8128418GB-300IT	GSI	获取价格	Cache SRAM, 8MX18, 5.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-
GS8128436B-167	GSI	获取价格	119 BGA

与GS8128418GB-200相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

64
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

GS8128418GB-200

GS8128418GB-200 技术参数

GS8128418GB-200 数据手册

与GS8128418GB-200相关器件

与GS8128418GB-200相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GS8128418GB-200

GS8128418GB-200 技术参数

GS8128418GB-200 数据手册

与GS8128418GB-200相关器件

与GS8128418GB-200相关文章

您还可以找

您在本页遇到什么问题？