Datasheet > GRM188R60J475KE19D

GRM188R60J475KE19D

更新时间： 2024-11-30 12:06:51

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
12页	899K
描述
Heterojunction Bipolar Transistor Technology (InGaP HBT)

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Document Number: MMA25312B

Rev. 0, 9/2012

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

MMA25312BT1

Technology (InGaP HBT)

High Efficiency/Linearity Amplifier

The MMA25312B is a high efficiency InGaP HBT amplifier designed for

use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and

wireless broadband mesh networks. It is suitable for applications with

frequencies from 2300 to 2700 MHz using simple external matching

components with a 3 to 5 volt supply.

2300--2700 MHz, 26 dB

31 dBm

InGaP HBT

Features

•

Frequency: 2300--2700 MHz

P1dB: 31 dBm @ 2500 MHz

Power Gain: 26 dB @ 2500 MHz

OIP3: 40 dBm @ 2500 MHz

Active Bias Control (On--chip)

Single 3 to 5 Volt Supply

Single--ended Power Detector

Cost--effective QFN Surface Mount Package

In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.

CASE 2131--01

QFN 3×3

PLASTIC

Table 1. Typical CW Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

Characteristic

Symbol 2300 2500 2700

Unit

MHz

550

Small--Signal Gain

(S21)

24.5

Supply Current

dBm

°C

RF Input Power

Input Return Loss

(S11)

IRL

ORL

P1dB

-- 1 4

-- 11

-- 1 2

-- 1 3

-- 1 2

-- 1 5

29.8

Storage Temperature Range

stg

--65 to +150

150

(2)

Junction Temperature

°C

Output Return Loss

(S22)

2. For reliable operation, the junction temperature should not

exceed 150°C.

Power Output @

1dB Compression

dBm

1. V

= V

= 5 Vdc, T = 25°C, 50 ohm system, CW

BIAS A

CC1

CC2

Application Circuit

Table 3. Thermal Characteristics

(3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 91°C, V = V

= V

= 5 Vdc

BIAS

CC1

CC2

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMA25312BT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...12

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与GRM188R60J475KE19D相关器件

型号	品牌	获取价格	描述	数据表
GRM188R60J475ME19#	MURATA	获取价格	民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信
GRM188R60J475ME19D	ADI	获取价格	Micro PMU with 1.2 A Buck Regulator
GRM188R60J475ME84	MURATA	获取价格	Chip Multilayer Ceramic Capacitors for General Purpose
GRM188R60J475ME84#	MURATA	获取价格	民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信
GRM188R60J475ME84D	MURATA	获取价格	Chip Multilayer Ceramic Capacitors for General Purpose
GRM188R60J475ME84J	MURATA	获取价格	Chip Multilayer Ceramic Capacitors for General Purpose
GRM188R60J476ME01#	MURATA	获取价格	民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信
GRM188R60J476ME15	MURATA	获取价格	Chip Multilayer Ceramic Capacitors for General Purpose
GRM188R60J476ME15#	MURATA	获取价格	移动设备
GRM188R60J476ME15D	ONSEMI	获取价格	Compact Intelligent Power Module Based Motor Evaluation Board with Interleaved Power Facto

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