Datasheet > GQZ8.2

GQZ8.2

更新时间： 2024-11-30 03:09:47

品牌	Logo	应用领域
强茂 - PANJIT		二极管齐纳二极管
页数	文件大小	规格书
4页	86K
描述
SURFACE MOUNT ZENER DIODES

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GQZ8.2 数据手册

DATA SHEET

GQZ2.0~GQZ56

SURFACE MOUNT ZENER DIODES

Unit : inch (mm)

QUADRO-MELF

VOLTAGE

POWER

500 mWatts

2.0 to 56 Volts

FEATURES

• Planar Die construction

• 500mW Power Dissipation

• Ideally Suited for Automated Assembly Processes

.067(1.7)

MECHANICAL DATA

• Case: Molded Glass QUADRO-MEIF

.020(0.5)

.012(0.3)

.020(0.5)

.012(0.3)

• Terminals: Solderable per MIL-STD-202E, Method 208

• Polarity: See Diagram Below

.146(3.7)

.130(3.3)

• Approx. Weight: 0.03 grams

• Mounting Position: Any

•

Packing information

T/R - 2.5K per 7" plastic Reel

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Value

Units

Power Dissipation at Tamb = 25 ^OC

500

175

TOT

Junction Temperature

^OC

Storage Temperature Range

-65 to +175

Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.

Parameter

Symbol

Min.

Typ.

Max.

Units

Thermal Resistance Junction to Ambient Air

0.3

K/mW

RthA

Forward Voltage at IF = 100mA

Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.

STAD-JAN.27.2004

PAGE . 1

12 3 4

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