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GQM1885C2AR75CB01 PDF预览

GQM1885C2AR75CB01

更新时间： 2024-01-09 17:34:11
品牌 Logo 应用领域
村田 - MURATA /
页数 文件大小 规格书
25页 565K
描述
RF HIGH FREQUENCY CHIP MONOLITHIC CERAMIC CAPACITOR

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GQM1885C2AR75CB01 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：, 0603
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8532.24.00.20风险等级：7.89
电容：7.5e-7 µF电容器类型：CERAMIC CAPACITOR
介电材料：CERAMIC高度：0.8 mm
JESD-609代码：e3长度：1.6 mm
安装特点：SURFACE MOUNT多层：Yes
负容差：33.33%端子数量：2
最高工作温度：125 °C最低工作温度：-55 °C
封装形状：RECTANGULAR PACKAGE封装形式：SMT
包装方法：TR, PAPER, 7 INCH正容差：33.33%
额定（直流）电压（URdc）：100 V尺寸代码：0603
表面贴装：YES温度特性代码：C0G
温度系数：-/+30ppm/Cel ppm/ °C端子面层：Tin (Sn) - with Nickel (Ni) barrier
端子形状：WRAPAROUND宽度：0.8 mm
Base Number Matches：1

GQM1885C2AR75CB01 数据手册

 浏览型号GQM1885C2AR75CB01的Datasheet PDF文件第1页浏览型号GQM1885C2AR75CB01的Datasheet PDF文件第2页浏览型号GQM1885C2AR75CB01的Datasheet PDF文件第4页浏览型号GQM1885C2AR75CB01的Datasheet PDF文件第5页浏览型号GQM1885C2AR75CB01的Datasheet PDF文件第6页浏览型号GQM1885C2AR75CB01的Datasheet PDF文件第7页 
■SPECIFICATIONS AND TEST METHODS  
No  
14  
Item  
Resistance to  
Specification  
Test Method  
The measured and observed characteristics shall satisfyPreheat the capacitor at 120 to 150℃ for 1 minute.  
Soldering Heat  
Immerse the capacitor in an eutectic solder solution or  
Sn-3.0Ag-0.5Cu solder solution at 270+/-5℃ for  
10+/-0.5 seconds. Let sit at room temperature for 24+/-2  
hours.  
the specifications in the following table.  
Appearance No defects or abnormalities.  
Capacitance Within ±2.5% or ±0.25 pF  
Change  
(Whichever is larger)  
Q
30pFmin.:Q≧1400  
30pFmax.:Q≧800+20C  
C:NominalCapacitance (pF)  
More than 10,000MΩ or 500Ω •F  
I.R.  
(Whichever is smaller)  
No defects.  
Dielectric  
Strength  
Temperature  
Cycle  
The measured and observed characteristics shall satisfyFix the capacitor to the supporting jig in the same  
15  
manner and under the same conditions as (10).  
Perform the five cycles according to the four heat  
treatments listed in the following table.  
the specifications in the following table.  
Appearance No defects or abnormalities.  
Let sit for 24+/-2 hours at room temperature, then measure.  
Capacitance Within ±2.5% or ±0.25pF  
Change  
(Whichever is larger)  
Temp.( C)  
1
2
3
30±3  
2 to 3  
30±3  
Operating Temp.+0/-3  
Room Temp  
Q
30pFmin. : Q≧1400  
30pFmax.: Q≧800+20C  
C:NominalCapacitance (pF)  
More than 10,000MΩ or 500Ω •F  
(Whichever is smaller)  
Max.  
Operating Temp.+3/-0  
I.R.  
Room Temp  
Dielectric  
Strength  
No defects.  
Humidity  
Steady State  
The measured and observed characteristics shall satisfySit the capacitor at 40±2℃ and 90 to 95% humiduty for  
16  
17  
18  
500±12 hours.  
the specifications in the following table.  
Remove and let sit for 24±2 hours (temperature compensating type)  
at room temperature, then measure.  
Appearance No defects or abnormalities.  
Capacitance Within ±5％ or ±0.5pF  
Change  
(Whichever is larger)  
30pF and over : Q≧350  
10pF and over, 30pF and below : Q≧275+5C/2  
10pF and below : Q≧200+10C  
C:Nominal Capacitance(pF)  
Q
I.R.  
More than 1,000MΩ or 50Ω •F (Whichever is smaller)  
The measured and observed characteristics shall satisfyApply the rated voltage at 40±2℃ and 90 to 95% humidity  
Humidity Load  
for 500±12 hours.  
the specifications in the following table.  
Remove and let sit for 24±2 hours at room temprature then  
muasure. The charge/discharge current is less than 50mA.  
Appearance No defects or abnormalities.  
Capacitance Within ±7.5% or ±0.75pF  
Change  
(Whichever is larger)  
Q
30pF and over : Q≧200  
30pF and below : Q≧100+10C/3  
C:Nominal Capacitance(pF)  
I.R.  
More than 500MΩ or 25Ω •F (Whichever is smaller)  
The measured and observed characteristics shall satisfyApply 200% of the rated voltage for 1000±12 hours at the  
High Temperature  
Load  
maximun operating temperature±3℃.  
the specifications in the following table.  
Let sit for 24±2 hours (temperature compensating type) aｔ  
room temperature, then measure.  
Appearance No defects or abnormalities.  
The charge/discharge current is less than 50mA  
Capacitance Within ±3% or ±0.3pF  
Change  
Q
(Whichever is larger)  
30pF and over : Q≧350  
10pF and over, 30pF and below : Q≧275+5C/2  
10pF and below : Q≧200+10C  
C:Nominal Capacitance(pF)  
I.R.  
More than 1,000MΩ or 50Ω •F (Whichever is smaller)  
ꢀꢀTable A-1  
Capacitance Change from 25C (%)  
-30  
Nominal Values  
(ppm/C) Note 1  
-55  
-10  
Char.  
5C  
Max.  
Min.  
Max.  
Min.  
Max.  
0.25  
Min.  
030  
0.58  
-0.24  
0.40  
-0.17  
-0.11  
ꢀꢀꢀNote１：Nominal values denote the temperature coefficient within a range of 25℃ to 125℃ (for 5C)  
JEMCNS-0003Ｆ  
3
1234567...25

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