5秒后页面跳转
GPP60D/4G-E3 PDF预览

GPP60D/4G-E3

更新时间: 2024-01-21 20:52:31
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 284K
描述
DIODE 6 A, 200 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE P600, 2 PIN, Rectifier Diode

GPP60D/4G-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.67其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:500 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:6 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified参考标准:MIL-19500
最大重复峰值反向电压:200 V最大反向恢复时间:5.5 µs
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

GPP60D/4G-E3 数据手册

 浏览型号GPP60D/4G-E3的Datasheet PDF文件第2页浏览型号GPP60D/4G-E3的Datasheet PDF文件第3页浏览型号GPP60D/4G-E3的Datasheet PDF文件第4页 
GPP60A thru GPP60G  
New Product  
Vishay General Semiconductor  
Glass Passivated Junction Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
VF  
6.0 A  
50 V to 400 V  
500 A  
1.1 V  
IR  
5.0 µA  
Tj max.  
150 °C  
Case Style P600  
Features  
Mechanical Data  
• Glass passivated chip junction  
Case: P600, molded epoxy over passivated junction  
• Low forward voltage drop  
Epoxy meets UL-94V-0 Flammability rating  
• Low leakage current, typical I less than 0.2 µA  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
R
able per J-STD-002B and JESD22-B102D  
• High forward surge capability  
Polarity: Color band denotes cathode end  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
application  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symb.  
VRRM  
GPP60A GPP60B GPP60D GPP60G  
Unit  
V
Maximum repetitive peak reverse voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
Maximum RMS voltage  
VRMS  
VDC  
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current 0.375" (9.5 mm)  
lead length at TA = 55 °C  
IF(AV)  
6.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
500  
A
Operating junction and storage temperature range  
TJ,TSTG  
- 55 to + 175  
°C  
Document Number 88886  
30-Aug-05  
www.vishay.com  
1

与GPP60D/4G-E3相关器件

型号 品牌 获取价格 描述 数据表
GPP60D/53 VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon, PLASTIC, CASE P600, 2 PIN
GPP60D/53-E3 VISHAY

获取价格

DIODE 6 A, 200 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE P600, 2 PIN, Rectifier Diode
GPP60D/56 VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon, PLASTIC, CASE P600, 2 PIN
GPP60D/56-E3 VISHAY

获取价格

DIODE 6 A, 200 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE P600, 2 PIN, Rectifier Diode
GPP60D/58-E3 VISHAY

获取价格

DIODE 6 A, 200 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE P600, 2 PIN, Rectifier Diode
GPP60D/60 VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon, PLASTIC, CASE P600, 2 PIN
GPP60D/64 VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon, PLASTIC, CASE P600, 2 PIN
GPP60D/64-E3 VISHAY

获取价格

DIODE 6 A, 200 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE P600, 2 PIN, Rectifier Diode
GPP60D/65 VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon, PLASTIC, CASE P600, 2 PIN
GPP60D/66-E3 VISHAY

获取价格

DIODE 6 A, 200 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE P600, 2 PIN, Rectifier Diode