Datasheet > GPP20G/4E-E3

GPP20G/4E-E3

更新时间： 2024-11-30 07:57:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	257K
描述
DIODE 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Rectifier Diode

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中文翻译

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数据手册

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GPP20G/4E-E3 数据手册

GPP20A thru GPP20M

Vishay General Semiconductor

New Product

Glass Passivated Junction Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

I_R

2.0 A

50 V to 1000 V

70 A

DO-204AC (DO-15)

5.0 µA

V_F

1.1 V

T_jmax.

150 °C

Features

Mechanical Data

• Glass passivated chip junction

Case: DO-204AC, molded epoxy over

passivated chip

• Low forward voltage drop

Epoxy meets UL-94V-0 Flammability rating

• Low leakage current, typical I less than 0.1 µA

Terminals: Matte tin plated (E3 Suffix) leads,

solderable per J-STD-002B and JESD22-B102D

Polarity: Color band denotes cathode end

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

Typical Applications

For use in general purpose rectification of power sup-

plies, inverters, converters and freewheeling diodes

application

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol GPP20A GPP20B GPP20D GPP20G GPP20J GPP20K GPP20M Unit

Maximum repetitive peak reverse voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

2.0

600

420

600

800

560

800

1000

700

Maximum RMS voltage

Maximum DC blocking voltage

100

1000

Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_A= 55 °C

I_F(AV)

Peak forward surge current 8.3 ms single

half sine-wave superimposed on rated load

I_FSM

Operating junction and storage

temperature range

T_J, T_STG

- 55 to + 150

°C

Document Number 88642

15-Sep-05

www.vishay.com

12 3 4

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GPP20G/62	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
GPP20G/65-E3	VISHAY	获取价格	DIODE 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Rectifier Dio
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