Datasheet > GP2030S

GP2030S

更新时间： 2024-01-24 17:16:30

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
7页	523K
描述
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

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数据手册

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GP2030S 数据手册

Pb Free Plating Product

ISSUED DATE :2005/08/10

GTM

CORPORATION

REVISED DATE :

N-CH BVDSS

20V

GP2030S

N-CH RDS(ON) 60mΩ

N-CH I

2.6A

-20V

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

P-CH BVDSS

N-CH RDS(ON) 80mΩ

N-CH

I -2.3A

Description

The GP2030S provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching

Package Dimensions

GAUGE PLANE

Millimeter

REF.

Min.

Max.

0.5334

Min.

Max.

0.279

10.16

7.112

8.255

0.203

9.017

6.096

7.620

0.381

2.921

0.356

1.143

0.762

0.203

4.953

0.559

0.508

1.778

1.143

0.356

SEATING PLANE

2.540 BSC

SECTION Z - Z

10.92

3.810

2.921

DIP-8

Absolute Maximum Ratings

Ratings

N-channel P-channel

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

f12

2.6

2.1

-20

f12

-2.3

-1.8

-10

Continuous Drain Current³

Pulsed Drain Current¹

Total Power Dissipation

Linear Derating Factor

I_D@T

=25к

=70к

I_DM

P_D@T

A=25к

2.0

W/ć

0.016

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient³Max.

Rthj-a

62.5

ć/W

GP2030S

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