Datasheet > GP19NC60S

GP19NC60S

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
14页	290K
描述
N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT

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GP19NC60S 数据手册

STGP19NC60S

N-channel 600V - 20A - TO-220

Medium frequency PowerMESH™ IGBT

Features

V_CE(sat)

(typ)@150°C

< 1.35V

I_C

V_CES

Type

@100°C

STGP19NC60S 600V

20A

■ Very low on-voltage drop (V

)

CE(sat)

■ High input impedance (voltage driven)

TO-220

■ IGBT co-packaged with ultrafast freewheeling

diode.

■ Minimum power losses at 5 kHz in hard

switching

■ Optimized performance for medium operating

frequencies.

Figure 1.

Internal schematic diagram

Application

■ Medium frequency motor control

Description

This IGBT utilizes the advanced PowerMESH™

process resulting in an excellent trade-off

between switching performance and low on-state

behavior.

Table 1.

Device summary

Order code

STGP19NC60S

Marking

Package

TO-220

Packaging

GP19NC60S

Tube

September 2007

Rev 3

1/14

www.st.com

12 3 4 5 6 7...14

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