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GNM2145C1H680KD01

更新时间： 2022-02-26 11:35:39
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村田 - MURATA /
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CHIP MONOLITHIC CERAMIC CAPACITOR

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GNM2145C1H680KD01 数据手册

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■SPECIFICATIONS AND TEST METHODS  
Specification  
No  
Item  
Test Method  
Temperature  
Compensating Type  
High Dielectric Type  
The measured and observed characteristics should satisfy  
the specifications in the following table.  
Set the capacitor at 40±2℃ and in 90 to 95% humiduty  
for 500±12 hours.  
16 Humidit  
Steady State  
Remove and set for 24±2 hours at room temperature, then  
measure.  
Appearance No defects or abnormalities.  
Capacitance Within ±5% or± 0.5pF  
B1,R1,R6,R7 :Within ±12.5%  
F1,F5 :Within ±30%  
Change  
Q/D.F.  
(Whichever is larger)  
30pF and over:Q≧350  
10pF and over  
［B1,R1,R6,R7］  
W.V.: 25Vmin. :0.05max.  
30pF and below:Q≧275+5/2C W.V.:16/10/6.3V :0.05max.  
10pF and below:Q≧200+10C  
[F1,F5]  
C:Nominal Capacitance(pF)  
W.V.:25Vmin : 0.075max.  
W.V.:16V : 0.1max.  
I.R.  
More than 1,000MW or 50W·F(Whichever is smaller)  
Dielectric  
Strength  
No failure.  
Apply the rated voltage at 40±2℃ and 90 to 95% humidity  
for 500±12 hours. Remove and set for 24±2 hours at room  
temprature then muasure. The charge/discharge current is  
less than 50mA.  
17 Humidity Load  
The measured and observed characteristics should satisfy  
the specifications in the following table.  
Appearance No defects or abnormalities.  
Capacitance  
Change  
Within ±7.5% or±0.75pF  
B1,R1,R6,R7 :Within ±12.5%  
F1,F5 :Within ±30%  
(Whichever is larger)  
Q/D.F.  
30pF and over:Q≧200  
［B1,R1,R6,R7］  
30pF and below:Q≧100+10/3C  
W.V.: 25Vmin. :0.05max.  
W.V.:16/10/6.3V :0.05max.  
C:Nominal Capacitance(pF)  
[F1,F5]  
W.V.:25Vmin : 0.075max.  
W.V.:16V : 0.1max.  
I.R.  
More than 500MΩ or 25Ω·F(Whichever is smaller)  
Dielectric  
Strength  
No failure.  
18 High Temperature  
Load  
The measured and observed characteristics should satisfy  
the specifications in the following table.  
Apply 200% of the rated voltage at the maximum operating  
temperature ±3℃ for 1000±12 hours.  
Set for 24±2 hours at room temperature, then measure.  
The charge/discharge current is less than 50mA.  
Appearance No defects or abnormalities.  
Capacitance Within ±3% or ±0.3pF  
B1,R1,R6,R7 :Within ±12.5%  
F1,F5 :Within ±30%  
Change  
(Whichever is larger)  
･Initial measurement for high dielectric constant type.  
Apply 200% of the rated DC voltage at the maximun operating  
temperature ±3C for one hour. Remove and set for  
24±2 hours at room temperature.  
Q/D.F.  
30pF and over:Q≧350  
［B1,R1,R6,R7］  
10pF and over  
W.V.: 25Vmin. :0.04max.  
Perform initial measurement.  
30pF and below: Q≧275+5/2C W.V.:16/10/6.3V :0.05max.  
10pF and below:Q≧200+10C  
[F1,F5]  
C:Nominal Capacitance (pF)  
W.V.:25Vmin : 0.075max.  
W.V.:16V : 0.1max.  
I.R.  
More than 1,000MW or 50W·F(Whichever is smaller)  
Table A-1  
Char.  
2C  
Capacitance Change from 20C (%)  
Nominal Values  
(ppm/C) *  
-55  
-25  
-10  
Max.  
0.82  
Min.  
-0.45  
Max.  
0.49  
Min.  
-0.27  
Max.  
0.33  
Min.  
-0.18  
0±60  
* Nominalvaluesdenotethe temperaturecoefficientwithina rangeof20Cto 125C  
Table A-2  
Capacitance Change from 25C (%)  
Nominal Values  
(ppm/C) *  
Char.  
-55  
-30  
-10  
Max.  
0.58  
Min.  
-024  
Max.  
0.40  
Min.  
-0.17  
Max.  
0.25  
Min.  
5C  
0±30  
-0.11  
* Nominalvaluesdenotethe temperaturecoefficientwithina rangeof25Cto 125C  
JEMCCS-0001K  
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