Datasheet > GM72V66841GLT-K

GM72V66841GLT-K

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器光电二极管
页数	文件大小	规格书
11页	49K
描述
Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54

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数据手册

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GM72V66841GLT-K 数据手册

GM72V66841G

AC CHARACTERISTICS II

-6

-7

-K

-H

-P

-S

Parameter

Symbol

Unit

Note

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Operation

Auto Refresh

tRC

RAS Cycle Time

tRRC

tRCD

tRAS

tRP

RAS to CAS Delay

RAS Active Time

100K

120K

RAS Precharge Time

RAS to RAS Bank Active Delay

CAS to CAS Delay

tRRD

tCCD

tWTL

tDPL

CLK

Write Command to Data-In Delay

Data-In to Precharge Command

Data-In to Active Command

DQM to Data-Out Hi-Z

tDAL

tDQZ

tDQM

tMRD

tPROZ3

tPROZ2

tPDE

tSRE

tREF

DQM to Data-In Mask

MRS to New Command

CAS Latency = 3

Precharge to Data

Output Hi-Z

CAS Latency = 2

Power Down Exit Time

Self Refresh Exit Time

Refresh Time

Note :

1. A new command can be given tRRC after self refresh exit

Rev. 0.2/Oct.00

1...5 6 789 10 11

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