Datasheet > GJ8050

GJ8050

更新时间： 2024-01-02 17:43:44

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
2页	145K
描述
NPN EPITAXIAL TRANSISTOR

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中文翻译

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数据手册

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GJ8050 数据手册

ISSUED DATE :2005/05/06

REVISED DATE :

GTM

CORPORATION

GJ8050

N P N E P I T A X I A L T R A N S I S T O R

Description

The GJ8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.

Features

*High Collector current (IC: 1.5A)

*Complementary to GJ8550

Package Dimensions

TO-252

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

3.00

Min.

0.50

2.20

0.45

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.40

2.30 REF.

0.90

5.40

0.80

0.70

0.60

0.90

Absolute Maximum Ratings (Ta = 25к, unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

Unit

CBO

VCEO

EBO

1.5

Base Current

0.5

Junction Temperature

Storage Temperature

Total Power Dissipation

+150

-55 ~ +150

1.25

TsTG

Electrical Characteristics (Rating at 25к ambient temperature unless otherwise specified)

Symbol

BVCBO

BVCEO

BVEBO

Min.

120

100

Typ.

Max.

Unit

Test Conditions

=100uA

=2mA

=100uA

CB=35V

BE=6V

CBO

100

0.5

1.2

1.0

500

EBO

*VCE(sat)

*VBE(sat)

*VBE(on)

=800mA, I

=80mA

C=800mA, I

CE=1V, I

=10mA

=5mA

*hFE

=100mA

=800mA

CE=10V, I =50mA, f=100MHz

MHz

Cob

CB=10V, IE=0, f=1MHz

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

120 ~ 200

160 ~ 300

250 ~ 500

GJ8050

Page: 1/2

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