Datasheet > GIB1403-E3/81

GIB1403-E3/81

更新时间： 2024-02-10 22:20:10

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	84K
描述
DIODE GEN PURP 150V 8A TO263AB

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GIB1403-E3/81 数据手册

GIB1401, GIB1402, GIB1403, GIB1404

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Vishay General Semiconductor

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

100

Resistive or Inductive Load

T_J= 125 °C

T_J= 100 °C

Infinite Heatsink Mounting, T_C

Free Air Rating, T_A

P.C.B. Mounting

0.1

T_J= 25 °C

0.01

100

125

150

100

Percent of Rated Peak Reverse Voltage (%)

Case Temperature (°C)

Fig. 1 - Max. Forward Current Derating Curve

Fig. 4 - Typical Reverse Leakage Characteristics

150

125

100

1000

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mVp-p

T_C= 125 °C

8.3 ms Single Half Sine-Wave

100

0.1

100

Reverse Voltage (V)

Number of Cycles at 60 Hz

Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current

Fig. 5 - Typical Junction Capacitance

100

T_J= 125 °C

T_J= 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

0.1

0.01

0.4

0.6

0.8

1.0

1.2

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics



Revision: 23-Feb-15

Document Number: 88632

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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