Datasheet > GF9926

GF9926

更新时间： 2024-11-28 23:53:39

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	101K
描述
TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| 20V V(BR)DSS \| 6A I(D) \| SO

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中文翻译

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数据手册

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GF9926 数据手册

GF9926

Dual N-Channel Enhancement-Mode MOSFET

Low V

20V R

30 Ω I 6.0A

GS(th)

DS(ON)

D1 D1 D2 D2

7 5

SO-8

0.197 (5.00)

0.189 (4.80)

0.157 (3.99)

0.150 (3.81)

S1 G1 S2 G2

0.244 (6.20)

0.228 (5.79)

0.05 (1.27)

0.04 (1.02)

Dimensions in inches

and (millimeters)

0.165 (4.19)

0.155 (3.94)

0.245 (6.22)

Min.

0.019 (0.48)

x 45°

0.020 (0.51)

0.013 (0.33)

0.010 (0.25)

0.009 (0.23)

0.007 (0.18)

0.050 (1.27)

0.069 (1.75)

0.053 (1.35)

0.035 (0.889)

0.025 (0.635)

0.050 typ.

(1.27)

0.050(1.27)

0.016 (0.41)

0°– 8°

0.009 (0.23)

0.004 (0.10)

Mounting Pad Layout

Mechanical Data

Features

Case: SO-8 molded plastic body

• Advanced Trench Process Technology

• High Density Cell Design for Ultra Low

On-Resistance

Terminals: Leads solderable per MIL-STD-750,

Method 2026

• Fast Switching

High temperature soldering guaranteed:

250°C/10 seconds at terminals

• Logic Level

Mounting Position: Any

Weight: 0.5g

• Ideal for Li ion battery pack applications

Maximum Ratings and Thermal Characteristics(T_A= 25°C unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

Continuous Drain Current

T_J= 150°C⁽¹⁾

T_A= 25°C

T_A= 70°C

6.0

4.8

I_D

Pulsed Drain Current

I_DM

I_S

Continuous Source Current (Diode Conduction)⁽¹⁾

1.7

T_A= 25°C

Maximum Power Dissipation⁽¹⁾

T_A= 70°C

2.0

1.3

P_D

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient⁽¹⁾Thermal Resistance

T_J, T_stg

R_θJA

–55 to 150

62.5

°C

°C/W

4/11/01

12 3 4 5

中文翻译

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