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GDZ3V6B-V PDF预览

GDZ3V6B-V

更新时间: 2024-11-14 07:01:15
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管
页数 文件大小 规格书
5页 79K
描述
Small Signal Zener Diodes

GDZ3V6B-V 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-G2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.68其他特性:LOW IMPEDANCE
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:100 Ω
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.2 W
认证状态:Not Qualified标称参考电压:3.6 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40最大电压容差:3.29%
工作测试电流:5 mABase Number Matches:1

GDZ3V6B-V 数据手册

 浏览型号GDZ3V6B-V的Datasheet PDF文件第2页浏览型号GDZ3V6B-V的Datasheet PDF文件第3页浏览型号GDZ3V6B-V的Datasheet PDF文件第4页浏览型号GDZ3V6B-V的Datasheet PDF文件第5页 
GDZ-V-Series  
Vishay Semiconductors  
Small Signal Zener Diodes  
Features  
• Silicon Planar Power Zener Diodes  
• Low Zener impedence and low leakage  
current  
e3  
• Popular in Asian designs  
• Compact surface mount device  
• Ideal for automated mounting  
• Lead (Pb)-free component  
20145  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Mechanical Data  
Case: SOD323 Plastic case  
Weight: approx. 5.0 mg  
Packaging Codes/Options:  
GS18/10 k per 13" reel (8 mm tape), 10 k/box  
GS08/3 k per 7" reel (8 mm tape), 15 k/box  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Power dissipation  
Test condition  
Symbol  
Pd  
Value  
200  
Unit  
mW  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Tj  
Value  
150  
Unit  
°C  
Junction temperature  
Storage temperature range  
Tstg  
- 55 to + 150  
Document Number 85766  
Rev. 1.5, 17-May-06  
www.vishay.com  
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