Datasheet > GDSSF2318E

GDSSF2318E

更新时间： 2024-01-21 00:41:23

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
4页	295K
描述
High Power and current handing capability

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中文翻译

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数据手册

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GDSSF2318E 数据手册

GDSSF2318E

DESCRIPTION

The SSF2318E uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and operation

with gate voltages as low as 2.5V.

GENERAL FEATURES

● V_DS= 20V,I_D=6.5A

Schematic diagram

R_DS(ON)< 34mΩ @ V_GS=1.8V

R_DS(ON)< 26mΩ @ V_GS=2.5V

R_DS(ON)< 22mΩ @ V_GS=4.5V

ESD Rating：2000V HBM

● High Power and current handing capability

● Lead free product is acquired

● Surface Mount Package

Marking and pin Assignment

Application

●Battery protection

●Load switch

SOT-23 top view

●Power management

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2318E

SSF2318E

SOT-23

Ø330mm

12mm

3000 units

ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±8

V^GS

6.5

I_D

Drain Current-Continuous@ Current-Pulsed (Note 1)

I_DM

Maximum Power Dissipation

1.4

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance,Junction-to-Ambient (Note 2)

R_θJA

℃/W

Suzhou Goodark Electronics Co., Ltd

Version 1.0

12 3 4

中文翻译

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