Datasheet > GDSSF3611E_15

GDSSF3611E_15

更新时间： 2024-01-08 16:06:05

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
5页	353K
描述
Main Product Characteristics

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中文翻译

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数据手册

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GDSSF3611E_15 数据手册

GDSSF3611E

Main Product Characteristics:

V_DSS-30 V

R_DS(on) 10.6 mΩ(typ.)

I_D-12A

Markingandpin

Assignment

Schematicdiagram

Features and Benefits:



AdvancedtrenchMOSFETprocesstechnology

Special designed for PWM, load switching and

generalpurposeapplications



Ultralowon-resistancewithlowgatecharge

Fastswitchingandreversebodyrecovery

150℃operatingtemperature

Description:

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the

on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely

efficientandreliabledeviceforuseinpowerswitchingapplicationandawidevarietyofotherapplications

Absolute max Rating:

Symbol

I_D@ TC = 25°C

I_D@ TC = 100°C

I_DM

Parameter

Max.

-12

Units

Continuous Drain Current, V_GS@ 10V①

Pulsed Drain Current②

-7.4

-48

P_D@TC = 25°C

V_DS

Power Dissipation③

Drain-Source Voltage

-30

V_GS

Gate-to-Source Voltage

± 20

T_JT_STG

Operating Junction and Storage Temperature Range

-55 to +150

°C

Thermal Resistance

Symbol

Characterizes

Junction-to-ambient (t ≤ 10s) ④

Typ.

Max.

Units

R_θJA

—

62.5

℃/W

Suzhou Goodark Electronics Co., Ltd

Version 1.0

12 3 4 5

中文翻译

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