Datasheet > GDTF2TVS40CA

GDTF2TVS40CA

更新时间： 2023-02-26 14:40:00

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
3页	286K
描述
Trans Voltage Suppressor Diode, 200W, 40V V(RWM), Bidirectional, Silicon, DIE

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数据手册

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GDTF2TVS40CA 数据手册

Peak Pulse Power 200W

Glass Passivated TVS

Features

●

Glass passivated chip

Low inductance

Excellent clamping capability

Very fast response time

200 W peak pulse power capability

with a 10/1000 µs waveform

Compatible with soldering

●

Devices for Bidirectional Applications

●

For bi-directional devices, use suffix C or CA

Electrical characteristics apply in both directions.

Process Details

Chip Type

PDPW

(pcs/4"wafer)

Size（mil）

Surface

Metalization

Ni(0.6~1um)/

Au(0.05um)

A (+1/-2)

B（±2）

C（±2）

D（±1）

GDTF2TVS

4,469

1.5

Maximum Ratings & Thermal Characteristics

(TA = 25 °C unless otherwise noted)

Parameter

Symbol

VALUE

200

UNIT

Peak pulse power dissipation with a 10/1000µs waveform

(see fig. 1)

P_PPM

Peak pulse current with a waveform (see fig. 3 , single

pulse)

I_PPM

See Next Table

1. Non-repetitive current pulse, per Fig.3 and derated above T_A=25℃ per Fig. 2

1/3

12 3

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