Datasheet > GDTSA13A

GDTSA13A

更新时间： 2024-01-01 15:59:24

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
8页	841K
描述
Trans Voltage Suppressor Diode, 500W, 13V V(RWM), Unidirectional, Silicon, DIE

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中文翻译

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数据手册

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GDTSA13A 数据手册

Peak Pulse Power 600W

Glass Passivated TVS

Features

●

Glass passivated chip

Low inductance

Excellent clamping capability

Very fast response time

600 W peak pulse power capability

with a 10/1000 µs waveform

Compatible with soldering

●

Devices for Bidirectional Applications

●

For bi-directional devices, use suffix C or CA

Electrical characteristics apply in both directions.

Process Details

Chip Type

PDPW

(pcs/4"wafer)

Size（mil）

B（±2） C（±2） D（±1）

Surface

Metalization

A (+1/-2)

Ni(0.6~1um)/

Au(0.05um)

GDTP6KE/SMBJ/P6SMB/SA

1,601

13 54 1.5

Notes: “A” is 88mil when Breakdown Voltage is 250 Volts and more.

Maximum Ratings & Thermal Characteristics

(TA = 25 °C unless otherwise noted)

Parameter

Symbol

VALUE

600

UNIT

(P6KE/SMBJ/P6SMB)

Peak pulse power dissipation with a 10/1000µs waveform

(see fig. 1)

P_PPM

500

(SA)

Peak pulse current with a waveform (see fig. 3 , single

pulse)

I_PPM

See Next Table

1. Non-repetitive current pulse, per Fig.3 and derated above T_A=25℃ per Fig. 2

1/8

12 3 4 5 6 7 8

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