Datasheet > GDTSA100CA

GDTSA100CA

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
固锝 - GOOD-ARK		局域网二极管
页数	文件大小	规格书
8页	841K
描述
Trans Voltage Suppressor Diode, 500W, 100V V(RWM), Bidirectional, Silicon, DIE

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中文翻译

获取价格

技术参数
数据手册

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GDTSA100CA 技术参数

生命周期：	Active	包装说明：	R-XXUC-N
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.84
其他特性：	EXCELLENT CLAMPING CAPABILITY	最大击穿电压：	123 V
最小击穿电压：	111 V	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	R-XXUC-N
最大非重复峰值反向功率耗散：	500 W	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	UNCASED CHIP
极性：	BIDIRECTIONAL	最大重复峰值反向电压：	100 V
表面贴装：	YES	技术：	AVALANCHE
端子形式：	NO LEAD	端子位置：	UNSPECIFIED

GDTSA100CA 数据手册

Peak Pulse Power 600W

Glass Passivated TVS

Features

●

Glass passivated chip

Low inductance

Excellent clamping capability

Very fast response time

600 W peak pulse power capability

with a 10/1000 µs waveform

Compatible with soldering

●

Devices for Bidirectional Applications

●

For bi-directional devices, use suffix C or CA

Electrical characteristics apply in both directions.

Process Details

Chip Type

PDPW

(pcs/4"wafer)

Size（mil）

B（±2） C（±2） D（±1）

Surface

Metalization

A (+1/-2)

Ni(0.6~1um)/

Au(0.05um)

GDTP6KE/SMBJ/P6SMB/SA

1,601

13 54 1.5

Notes: “A” is 88mil when Breakdown Voltage is 250 Volts and more.

Maximum Ratings & Thermal Characteristics

(TA = 25 °C unless otherwise noted)

Parameter

Symbol

VALUE

600

UNIT

(P6KE/SMBJ/P6SMB)

Peak pulse power dissipation with a 10/1000µs waveform

(see fig. 1)

P_PPM

500

(SA)

Peak pulse current with a waveform (see fig. 3 , single

pulse)

I_PPM

See Next Table

1. Non-repetitive current pulse, per Fig.3 and derated above T_A=25℃ per Fig. 2

1/8

12 3 4 5 6 7 8

中文翻译

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