Datasheet > GD400HFU120C2S

GD400HFU120C2S

更新时间： 2024-04-09 19:00:18

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
9页	258K
描述
C2.0.Half Bridge

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GD400HFU120C2S 数据手册

GD400HFU120C2S

IGBT Module

Switching Characteristics

Symbol

Parameter

Turn-On Delay Time

Rise Time

Test Conditions

Min. Typ. Max. Units

t_d(on)

t_r

t_d(off)

t_f

680

142

638

Turn-Off Delay Time

Fall Time

V_CC=600V,I_C=400A,

R_G=2.2Ω,V_GE=±15 V,

T_j=25℃

Turn-On Switching

Loss

E_on

E_off

19.0

32.5

Turn-Off Switching

Loss

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

690

146

669

108

Turn-Off Delay Time

Fall Time

V_CC=600V,I_C=400A,

R_G=2.2Ω,V_GE=±15 V,

T_j=125℃

Turn-On Switching

Loss

E_on

E_off

26.1

36.7

Turn-Off Switching

Loss

C_ies

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

33.7

2.99

C_oes

V_CE=30V,f=1MHz,

V_GE=0V

C_res

1.21

T_P≤10μs,V_GE=15 V,

T_j=25℃,V_CC=600V,

I_SC

SC Data

2600

0.5

_CEM≤1200V

R_Gint

L_CE

Internal Gate Resistance

Stray Inductance

Module Lead Resistance,

Terminal To Chip

R_CC’+EE’

T_C=25℃

0.32

mΩ

Electrical Characteristics of DIODE T_C=25℃ unless otherwise noted

Symbol

Parameter

Diode Forward

Vol tage

Test Conditions

T_j=25℃

Min. Typ. Max. Units

1.95

1.85

24.1

44.3

220

2.35

V_F

I_F=400A

μC

T_j=125℃

T_j=25℃

T_j=125℃

T_j=25℃

T_j=125℃

T_j=25℃

T_j=125℃

Q_r

Recovered Charge

I_F=400A,

V_R=600 V,

Peak Reverse

I_RM

E_rec

Recovery Current di/dt=-2850A/μs,

295

V_GE=-15V

13.9

24.8

Reverse Recovery

Energy

2/17/2011

3/9

Rev.B

1 234 5 6 7...9

下载PDF

与GD400HFU120C2S相关器件

型号	品牌	描述	获取价格	数据表
GD400HFX120C2S	STARPOWER	C2.0-Half Bridge	获取价格
GD400HFX170C2S	STARPOWER	C2.0-Half Bridge	获取价格
GD400HFX65C2S	STARPOWER	C2.0-Half Bridge	获取价格
GD400HFX65C8S	STARPOWER	C8.0-Half Bridge	获取价格
GD400HFX65C8SN	STARPOWER	C8.1-Half Bridge	获取价格
GD400HFY120C2S	STARPOWER	C2.0-Half Bridge	获取价格