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GD400MLX65C2S PDF预览

GD400MLX65C2S

更新时间: 2024-04-09 18:59:13
品牌 Logo 应用领域
斯达半导体 - STARPOWER PC
页数 文件大小 规格书
11页 331K
描述
C2.4-NPC1

GD400MLX65C2S 数据手册

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GD400MLX65C2S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD400MLX65C2S  
650V/400A 3-level in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
3-level-applications.  
Features  
Low VCE(sat) trench IGBT technology  
6μs short circuit capability  
V
CE(sat) with positive temperature coefficient  
Maximum junction temperature 175℃  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
Solar power  
UPS  
3-Level-Applications  
Equivalent Circuit Schematic  
©2017 STARPOWER Semiconductor Ltd.  
2/23/2017  
1/11  
Preliminary  

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