Datasheet > GD400SGT170C2S

GD400SGT170C2S

更新时间： 2024-04-09 18:59:25

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
8页	338K
描述
C2.1.Single

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数据手册

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GD400SGT170C2S 数据手册

GD400SGT170C2S

IGBT Module

STARPOWER

SEMICONDUCTOR^TM

IGBT

GD400SGT170C2S

Molding Type Module

1700V/400A 1 in one-package

General Description

STARPOWER IGBT Power Module provides ultra

low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as

Inverters and UPS.

Features



Low V_CE(sat)trench IGBT technology

Low switching losses

10μs short circuit capability

_CE(sat)with positive temperature coefficient

Low inductance case

Fast & soft reverse recovery anti-parallel FWD

Isolated copper baseplate using DBC technology

Equivalent Circuit Schematic

Typical Applications



AC inverter drives

Switching mode power supplies

Absolute Maximum Ratings T_C=25℃ unless otherwise noted

Symbol

Description

Collector-Emitter Voltage

Gate-Emitter Voltage

GD400SGT170C2S

Units

V_CES

V_GES

1700

±20

2011 STARPOWER Semiconductor Ltd.

6/28/2011

2/5

Rev.B

12 3 4 5 6 7 8

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