Datasheet > GD100HFU120C1S

GD100HFU120C1S

更新时间： 2022-03-20 11:55:03

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GD100HFU120C1S 数据手册

GD100HFU120C1S

IGBT Module

Symbol

Description

GD100HFU120C1S

Units

V_GES

Gate-Emitter Voltage

±20V

145

Collector Current @ T_C=25℃, T_j=150℃

@ T_C=80℃, T_j=150℃

I_C

100

I_CM(1)

Pulsed Collector Current

@ T_C=80℃

200

I_F

Diode Continuous Forward Current

Diode Maximum Forward Current

Maximum power Dissipation @ T_j=150℃

Short Circuit Withstand Time @ T_j=125℃

Operating Junction Temperature

Storage Temperature Range

100

I_FM

200

P_D

357

T_SC

μs

T_j

-40 to +150

-40 to +125

1250

℃

T_STG

I²t-value, Diode

℃

A²s

V_R=0V, t=10ms, T_j=125℃

V_ISO

Isolation Voltage RMS, f=50Hz, t=1min

Power Terminal Screw:M5

2500

2.5 to 5

3 to 6

N.m

Mounting Torque

Mounting Screw:M6

Notes:

(1) Repetitive rating: Pulse width limited by max. junction temperature

Electrical Characteristics of IGBT ^{Tc=25℃unless otherwise noted}

Off Characteristics

Symbol

BV_CES

I_CES

I_GES

Parameter

Collector-Emitter

Breakdown Voltage

Test Conditions

Min. Typ. Max. Units

T_j=25℃

1200

V_CE=V_CES,V_GE=0V,

T_j=25℃

Collector Cut-Off Current

Gate-Emitter Leakage

Current

V_GE=V_GES,V_CE=0V,

T_j=25℃

400

On Characteristics

Symbol

V_GE(th)

Parameter

Test Conditions

I_C=4mA,V_CE=V_GE,

T_j=25℃

Min. Typ. Max. Units

Gate-Emitter Threshold

Voltage

4.4

5.0

6.0

3.7

I_C=100A,V_GE=15V,

T_j=25℃

3.46

3.52

Collector to Emitter

Saturation Voltage

V_CE(sat)

I_C=100A,V_GE=15V,

T_j=125℃

Switching Characteristics

Symbol

t_d(on)

t_r

Parameter

Turn-On Delay Time

Rise Time

Test Conditions

Min. Typ. Max. Units

V_CC=600V,I_C=100A,

R_G=4.7Ω, V_GE=±15V,

T_j=25℃

t_d(off)

Turn-Off Delay Time

350

2/8

Rev.B

123 4 5 6 7

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