Datasheet > GD100FFU120C6S

GD100FFU120C6S

更新时间： 2024-04-09 19:02:52

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
6页	159K
描述
C6.2.3 phase bridge

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GD100FFU120C6S 数据手册

GD100FFU120C6S

IGBT Module

Absolute Maximum Ratings T_C=25℃unless otherwise noted

Symbol

V_CES

V_GES

Description

GD100FFU120C6S

Units

Collector-Emitter Voltage

1200

±20

150

Gate-Emitter Voltage

Collector Current @ T_C=25℃

@ T_C=80℃

I_C

100

I_CM(1)

I_F

Pulsed Collector Current @ T_C=80℃

Diode Continuous Forward Current

Diode Maximum Forward Current

Maximum power Dissipation @ T_j=150℃

Short Circuit Withstand Time @ T_j=150℃

Maximum Junction Temperature

Storage Temperature Range

200

100

I_FM

200

P_D

868

μs

℃

T_SC

T_j

150

T_STG

V_ISO

Mounting

Torque

Notes:

-40 to +125

2500

Isolation Voltage RMS,f=50Hz,t=1min

Mounting Screw:M5

3.0 to 6.0

N.m

(1) Repetitive rating: Pulse width limited by max. junction temperature

Electrical Characteristics of IGBT ^T_C^{=25℃unless otherwise noted}

Off Characteristics

Symbol

Parameter

Collector-Emitter

Breakdown Voltage

Test Conditions

Min. Typ. Max. Units

V_(BR)CES

T_j=25℃

1200

V_CE=V_CES,V_GE=0V,

T_j=25℃

I_CES

I_GES

Collector Cut-Off Current

5.0

Gate-Emitter Leakage

Current

V_GE=V_GES,V_CE=0V,

T_j=25℃

400

On Characteristics

Symbol

Parameter

Test Conditions

I_C=1.0mA,V_CE=V_GE,

T_j=25℃

Min. Typ. Max. Units

Gate-Emitter Threshold

Voltage

V_GE(th)

4.4

5.0

6.0

I_C=100A,V_GE=15V,

T_j=25℃

3.45

3.75

3.90

Collector to Emitter

Saturation Voltage

V_CE(sat)

I_C=100A,V_GE=15V,

T_j=125℃

9/19/2010

2/6

Preliminary

123 4 5 6

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