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GBU25 PDF预览

GBU25

更新时间: 2024-02-29 06:06:00
品牌 Logo 应用领域
尼尔 - NELLSEMI /
页数 文件大小 规格书
3页 566K
描述
Glass Passivated Single-Phase Bridge Rectifier

GBU25 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:unknown配置:BRIDGE, 4 ELEMENTS
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1 V
最大非重复峰值正向电流:240 A元件数量:4
最高工作温度:150 °C最大输出电流:25 A
最大重复峰值反向电压:1000 V子类别:Bridge Rectifier Diodes
表面贴装:NOBase Number Matches:1
类别:DiodesVRRM (V) max:1000
IF (A) max:25VF (V) max:1.05
Condition1_IF (A):12.5IFSM (A) max:300
IR (uA) max:10Condition2_VR (V):1000
trr (ns) max: -AEC Qualified: -
最高工作温度:150最低工作温度:-55
MSL等级: -生命周期:Active
是否无铅:yes符合Reach:yes
符合RoHS:yesECCN代码:EAR99
Package Outlines:GBU

GBU25 数据手册

 浏览型号GBU25的Datasheet PDF文件第1页浏览型号GBU25的Datasheet PDF文件第3页 
RoHS  
GBU25 Series RoHS  
Nell High Power Products  
MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
GBU25  
J
PARAMETER  
UNIT  
SYMBOL  
D
G
K
M
VRRM  
VRSM  
200  
300  
200  
400  
500  
400  
600  
700  
600  
25  
800  
900  
800  
1000  
1100  
1000  
Maximum repetitive peak reverse voltage  
Peak reverse non-repetitive voltage  
V
V
V
A
Maximum DC blocking voltage  
VDC  
IF(AV)  
Maximum average forward rectified output current, Tc = 85°C  
Peak forward surge current single sine-wave superimposed on  
rated load  
IFSM  
A
350  
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)  
for fusing  
A2s  
I2t  
508  
VISO  
TJ  
2500  
RMS isolation voltage from case to leads  
V
Operating junction storage temperature range  
-40 to 150  
ºC  
ºC  
TSTG  
-40 to 150  
Storage temperature range  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
GBU25  
J
TEST  
CONDITIONS  
UNIT  
PARAMETER  
SYMBOL  
D
G
K
M
VF  
IR  
IF = 12.5A  
Maximum instantaneous forward drop per diode  
1.10  
5
V
Maximum reverse DC current at rated DC blocking  
voltage per diod  
TA = 25°C  
µA  
TA = 150°C  
500  
THERMAL AND MECHANICAL (T = 25°C unless otherwise noted)  
A
GBU25  
J
UNIT  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
D
G
K
M
Typical thermal resistance  
junction to case  
Single-side heat dissipation, sine  
half wave  
(1)  
RθJC  
1.0  
°C/W  
A mounting compound is recommended  
and the torque should be rechecked after  
a period of 3 hours to allow for the spread  
of the compound.  
Mounting  
.
N m  
0.8  
4.0  
torque  
to heatsink M3  
± 10 %  
Approximate weight  
g
Notes  
(1) With heatsink, single side heat dissipation, half sine wave.  
Ordering Information Tabel  
Device code  
GBU 25  
K
3
1
2
-
-
-
Product type : “GBU” Package,1Ø Bridge  
IF(AV) rating : "25" for 25A  
1
2
3
Voltage code : D = 200V  
G = 400V  
J = 600V  
K = 800V  
M = 1000V  
Page 2 of 3  
www.nellsemi.com  

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