Datasheet > GBU10D-LF

GBU10D-LF

更新时间： 2024-02-14 20:27:18

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
4页	41K
描述
Rectifier Diode,

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中文翻译

获取价格

技术参数
数据手册

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GBU10D-LF 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.61
二极管类型：	RECTIFIER DIODE	Base Number Matches：	1

GBU10D-LF 数据手册

GBU10A – GBU10M

WON-TOP ELECTRONICS

100

Mounted on

100 x 100 x 3.0mm

Al. Finned Heatsink

T_J= 150°C

1.0

0.1

T_J= 25°C

Resistive or

Inductive Load

Pulse Width = 300µs

1% Duty Cycle

15 30 45 60 75 90 105 120 135 150

0.4

0.8

1.2

1.6

2.0

T_C, CASE TEMPERATURE (°C)

Fig. 1 Forward Current Derating Curve

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

250

200

150

100

1000

100

Single Half-Sine-Wave

JEDEC Method

T_A= 150°C

T_A= 125°C

1.0

T_A= 25°C

0.1

0.01

100

120

140

NUMBER OF CYCLES AT 60Hz

Fig. 3 Forward Surge Current Derating Curve

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 4 Typical Reverse Characteristics

1000

T_J= 25°C

f = 1MHz

GBU10A – GBU10G

100

GBU10J – GBU10M

Sine-Wave

T_J= 150°C

100

I_F(AV), AVERAGE FORWARD CURRENT (A)

Fig. 5 Forward Power Dissipation

V_R, DC REVERSE VOLTAGE (V)

Fig. 6 Typical Junction Capacitance

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Revision: September, 2012

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