Datasheet > GBU10G

GBU10G

更新时间： 2024-11-10 14:48:35

品牌	Logo	应用领域
WON-TOP		局域网二极管
页数	文件大小	规格书
4页	41K
描述
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GBU10G 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

GBU10G 数据手册

GBU10A – GBU10M

10A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER

WON-TOP ELECTRONICS

Features



Glass Passivated Die Construction



Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

Plastic Material Has UL Flammability

Classification 94V-0

GBU

Dim

Min

21.80

18.30

7.40

3.50

1.52

2.16

4.83

1.65

1.02

1.90

3.30

17.50

0.45

Max

22.30

18.80

7.90

4.10

2.03

2.54

5.33

2.03

2.16

1.27

2.16

3.56

18.00

0.68

Mechanical Data



H H H

Case: GBU, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Weight: 4.0 grams (approx.)

Mounting Position: Any

Mounting Torque: 0.8 N.m Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4



All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

GBU

10A

GBU

10B

GBU

10D

GBU

10G

GBU

10J

GBU

10K

GBU

10M

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

VR(RMS)

280

Average Rectified Output Current @T_C= 100°C

(Note 1)

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

220

Forward Voltage per leg

@I_F= 5.0A

VFM

IRM

1.05

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

5.0

500

µA

I²t Rating for Fusing (t < 8.3ms)

I²t

200

A²s

Typical Junction Capacitance (Note 2)

211

Thermal Resistance Junction to Ambient (Note 3)

Thermal Resistance Junction to Case (Note 1)

RθJA

RθJC

2.2

°C/W

RMS Isolation Voltage Terminals to Case, t = 1min

Operating and Storage Temperature Range

VISO

1500

TJ, TSTG

-55 to +150

°C

Note: 1. Mounted on 100 x 100 x 3.0mm thick Al. heatsink.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

3. Mounted on PCB with 12 x 12mm copper pads and measured at lead length 9.5mm from case.

Revision: September, 2012

www.wontop.com

12 3 4

中文翻译

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与GBU10G相关器件

型号	品牌	获取价格	描述	数据表
GBU10G-BP	MCC	获取价格	Bridge Rectifier Diode, 1 Phase, 10A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBU,
GBU10G-BP-HF	MCC	获取价格	Bridge Rectifier Diode,
GBU10G-LF	WTE	获取价格	Rectifier Diode,
GBU10GP	MCC	获取价格	DIODE 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, GBU, 4 PIN, Bridge Rectifier
GBU10G-T	DIOTEC	获取价格	Bridge Rectifier Diode,
GBU10J	GULFSEMI	获取价格	SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 10.0A
GBU10J	SECOS	获取价格	Molding Single-Phase Bridge Rectifier
GBU10J	DACHANG	获取价格	Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000V Forward Current 10 A
GBU10J	DIOTEC	获取价格	Bridge Rectifier Diode,
GBU10J	LRC	获取价格	High Current Glass Passivated Molding Single-Phase Bridge Rectifier

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