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GBPC2504 PDF预览

GBPC2504

更新时间: 2024-11-20 10:40:51
品牌 Logo 应用领域
EIC /
页数 文件大小 规格书
2页 95K
描述
GLASS PASSIVATED SINGLE

GBPC2504 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:S-PUFM-D4
Reach Compliance Code:compliant风险等级:5.57
其他特性:HIGH RELIABILITY最小击穿电压:400 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:S-PUFM-D4
最大非重复峰值正向电流:300 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:25 A封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED参考标准:TS 16949
最大重复峰值反向电压:400 V表面贴装:NO
端子形式:SOLDER LUG端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GBPC2504 数据手册

 浏览型号GBPC2504的Datasheet PDF文件第2页 
Certificate TH97/10561QM  
Certificate TW00/17276EM  
GLASS PASSIVATED SINGLE-  
PHASE BRIDGE RECTIFIERS  
GBPC25005 - GBPC2510  
PRV : 50 - 1000 Volts  
Io : 25 Amperes  
BR50  
0.728(18.50)  
0.688(17.40)  
FEATURES :  
* Glass passivated junction chip  
* High surge current capability  
* High current capability  
* High reliability  
1.130(28.70)  
1.120(28.40)  
0.570(14.50)  
0.530(13.40)  
0.685(16.70)  
0.618(15.70)  
* Low reverse current  
* Low forward voltage drop  
* Pb / RoHS Free  
0.210(5.30)  
0.200(5.10)  
0.658(16.70)  
0.618(15.70)  
MECHANICAL DATA :  
0.252(6.40)  
0.248(6.30)  
0.032(0.81)  
0.028(0.71)  
* Case : Molded plastic with heatsink integrally  
mounted in the bridge encapsulation  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : plated .25" (6.35 mm). Faston  
* Polarity : Polarity symbols marked on case  
* Mounting position : Bolt down on heat-sink with  
silicone thermal compound between bridge  
and mounting surface for maximum heat  
transfer efficiency.  
φ0.100(2.50)  
0.090(2.30)  
0.905(23.0)  
0.826(21.0)  
0.310(7.87)  
0.280(7.11)  
Metal Heatsink  
Dimensions in inches and ( millimeters )  
* Weight : 17.1 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise noted.  
GBPC GBPC GBPC GBPC GBPC GBPC GBPC  
25005 2501 2502 2504 2506 2508 2510  
RATING  
SYMBOL  
UNIT  
VRRM  
VRMS  
VDC  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Bridge Input Voltage  
Maximum DC Blocking Voltage  
Maximum Average Forward Current Tc = 50 °C (1)  
Peak Forward Surge Current Single Sine Wave  
Superimposed on Rated Load  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
25  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
100  
1000  
IF(AV)  
IFSM  
300  
375  
1.1  
A
I2t  
A2sec  
V
Rating for fusing (non-repetitive, 1ms < t < 8.3 ms)  
at IF = 12.5 A  
Maximum Instantaneous Forward  
Voltage Drop Per Diode  
VF  
IR  
IR(H)  
5
Maximum DC Reverse Current at  
Rated DC Blocking Voltage Per Diode  
Ta = 25 °C  
μA  
μA  
500  
300  
1.9  
Ta = 125 °C  
CJ  
Typical Junction Capacitance Per Diode (at 4 V, 1MHz)  
Typical Thermal Resistance form Junction to Case  
Operating Junction and Storage Temperature Range  
pF  
RӨJC  
TJ, TSTG  
°C/W  
°C  
- 55 to + 150  
Note : (1) Unit mounted on 5 x 6 x 4.9" AL, Finned Plate.  
Page 1 of 2  
Rev. 00 : June 25, 2007  

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