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GBJ4G-LF PDF预览

GBJ4G-LF

更新时间: 2024-01-03 07:46:40
品牌 Logo 应用领域
WTE 局域网二极管
页数 文件大小 规格书
4页 58K
描述
Bridge Rectifier Diode, 1 Phase, 4A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBJ-4, 4 PIN

GBJ4G-LF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.6
其他特性:UL RECOGNIZED, HIGH RELIABILITY最小击穿电压:400 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
JESD-609代码:e3湿度敏感等级:2
最大非重复峰值正向电流:150 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:4 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260最大重复峰值反向电压:400 V
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

GBJ4G-LF 数据手册

 浏览型号GBJ4G-LF的Datasheet PDF文件第2页浏览型号GBJ4G-LF的Datasheet PDF文件第3页浏览型号GBJ4G-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
Pb  
GBJ4A – GBJ4M  
4.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER  
Features  
!
Glass Passivated Die Construction  
!
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Ideal for Printed Circuit Boards  
Recognized File # E157705  
A
G
KBJ-4  
Dim  
A
B
C
D
E
Min  
24.7  
14.7  
Max  
25.3  
15.3  
4.0  
B
C
+
~
~
-
!
H
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ J  
L
D
17.0  
3.3  
18.0  
3.7  
K
E
G
H
J
3.1Ø  
1.05  
1.7  
3.6Ø  
1.45  
2.1  
Mechanical Data  
P
P
P
!
!
Case: KBJ-4, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
M
K
L
0.9  
1.1  
N
1.8  
2.2  
!
!
!
!
!
Polarity: As Marked on Body  
Weight: 6.0 grams (approx.)  
Mounting Position: Any  
Mounting Torque: 10 cm-kg (8.8 in-lbs) Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
M
N
P
4.4  
4.8  
3.4  
3.8  
R
G
7.3  
7.7  
R
S
9.3  
9.7  
2.5  
2.9  
S
T
0.6  
0.8  
T
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol GBJ4A GBJ4B GBJ4D GBJ4G GBJ4J GBJ4K GBJ4M Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
4.0  
V
A
Average Rectified Output Current @TC = 115°C  
(Note 1)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
150  
1.0  
A
Forward Voltage per diode  
@IF = 2.0A  
VFM  
IR  
V
Peak Reverse Current  
@TA = 25°C  
10  
250  
µA  
At Rated DC Blocking Voltage  
@TA = 125°C  
Typical Thermal Resistance per leg (Note 2)  
Typical Thermal Resistance per leg (Note 1)  
Operating and Storage Temperature Range  
RJA  
RJC  
30  
5.5  
°C/W  
°C/W  
°C  
Tj, TSTG  
-55 to +150  
Note: 1. Device mounted on 75 x 75 x 1.6mm thick Al plate heatsink.  
2. Device mounted on P.C.B. without heatsink.  
GBJ4A – GBJ4M  
1 of 4  
© 2006 Won-Top Electronics  

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