Datasheet > GB02SLT12-214

GB02SLT12-214

更新时间： 2022-02-26 14:00:36

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GENESIC		/
页数	文件大小	规格书
7页	470K
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Silicon Carbide Schottky Diode

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GB02SLT12-214 数据手册

GB02SLT12-214

1200 V SiC MPS™ Diode

V_RRM

I_{F (Tc}

1200 V

2 A

Silicon Carbide Schottky Diode

160 °C)

Q_C

8 nC

Features

Package

• High Avalanche (UIS) Capability

• Enhanced Surge Current Capability

• Superior Figure of Merit Q_C/I_F

• Low Thermal Resistance

• 175 °C Maximum Operating Temperature

• Temperature Independent Switching Behavior

• Positive Temperature Coefficient of V_F

DO-214

•

Extremely Fast Switching Speeds

Advantages

Applications

• Low Standby Power Losses

• Improved Circuit Efficiency (Lower Overall Cost)

• Low Switching Losses

• Boost Diode in Power Factor Correction (PFC)

• Switched Mode Power Supplies (SMPS)

• AC-DC Converters & DC-DC Converters

• Freewheeling / Anti-parallel Diode in Inverters

• Solar Micro-inverters

• Ease of Paralleling without Thermal Runaway

• Smaller Heat Sink Requirements

• Low Reverse Recovery Current

• Low Device Capacitance

• LED and HID Lighting

• Medical Imaging Systems

• High Voltage Sensing

• Low Reverse Leakage Current

Absolute Maximum Ratings (At T_C= 25 °C Unless Otherwise Stated)

Parameter

Symbol

V_RRM

I_F

Conditions

Values

Unit

Repetitive Peak Reverse Voltage

Continuous Forward Current

1200

T_C= 160 °C, D = 1

T_C= 25 °C, t_P= 10 ms

T_C= 150 °C, t_P= 10 ms

T_C= 25 °C, t_P= 10 ms

T_C= 150 °C, t_P= 10 ms

Non-Repetitive Peak Forward Surge

Current, Half Sine Wave

I_F,SM

Repetitive Peak Forward Surge Current,

Half Sine Wave

I_F,RM

Non-Repetitive Peak Forward Surge

Current

i²t Value

I_F,max

T_C= 25 °C, t_P= 10 µs

200

∫i²dt

E_AS

T_C= 25 °C, t_P= 10 ms

L = 15 mH, I_AS= 2 A

V_R= 0 ~ 960 V

1.7

A²s

V/ns

Non-Repetitive Avalanche Energy

Diode Ruggedness

dV/dt

P_tot

100

Power Dissipation

T_C= 25 °C

Operating and Storage Temperature

T_j, T_stg

-55 to 175

°C

Aug 2018 Rev1.2

www.genesicsemi.com/schottky_mps/GB02SLT12-214.pdf

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