Datasheet > GB02SLT12-214_18

GB02SLT12-214_18

更新时间： 2022-02-26 14:09:09

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
7页	2201K
描述
Silicon Carbide Power Schottky Diode

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GB02SLT12-214_18 数据手册

GB02SLT12-214

1200 V SiC MPS™ Diode

Silicon Carbide Power

Schottky Diode

V_RRM

I_{F (Tc}

1200 V

3 A

135°C)

Q_C

11 nC

Features

Package

 High Avalanche (UIS) Capability

 Enhanced Surge Current Capability

 175 °C Maximum Operating Temperature

 Temperature Independent Switching Behavior

 Positive Temperature Coefficient Of V_F

 Extremely Fast Switching Speeds

 Superior Figure of Merit Q_C/I_F

DO-214

Applications

Advantages

 Low Standby Power Losses

 Improved Circuit Efficiency (Lower Overall Cost)

 Low Switching Losses

 Power Factor Correction (PFC)

 Switched-Mode Power Supply (SMPS)

 Solar Inverters

 Ease of Paralleling Devices without Thermal Runaway

 Smaller Heat Sink Requirements

 Low Reverse Recovery Current

 Wind Turbine Inverters

 Motor Drives

 Induction Heating

 Low Device Capacitance

 Low Reverse Leakage Current at Operating Temperature

 Uninterruptible Power Supply (UPS)

 High Voltage Multipliers

Absolute Maximum Ratings

Parameter

Symbol

Conditions

Values

Unit

Repetitive Peak Reverse Voltage

V_RRM

1200

T_C= 25 °C, D = 1

T_C= 135 °C, D = 1

Continuous Forward Current

I_F

T_C= 158 °C, D = 1

220

1.8

100

T_C= 25 °C, t_P= 10 ms

T_C= 150 °C, t_P= 10 ms

T_C= 25 °C, t_P= 10 ms

T_C= 150 °C, t_P= 10 ms

T_C= 25 °C, t_P= 10 µs

T_C= 25 °C, t_P= 10 ms

L = 30 mH, I_AV= 2 A, V_DD= 60 V

V_R= 0 ~ 960 V

Non-Repetitive Peak Forward Surge Current,

Half Sine Wave

Repetitive Peak Forward Surge Current, Half

Sine Wave

I_F,SM

I_F,RM

Non-Repetitive Peak Forward Surge Current

I_F,max

∫i²dt

E_AS

dV/dt

P_tot

A²s

V/µs

I²t Value

Non-Repetitive Avalanche Energy

Diode Ruggedness

Power Dissipation

T_C= 25 °C

Operating and Storage Temperature

T_j, T_stg

-55 to 175

°C

Electrical Characteristics

Parameter

Values

Symbol

Conditions

Unit

min.

typ.

1.5

2.3

0.1

max.

1.8

2.7

I_F= 2 A, T_j= 25 °C

I_F= 2 A, T_j= 175 °C

V_R= 1200 V, T_j= 25 °C

V_R= 1200 V, T_j= 175 °C

V_R= 400 V

I_F≤ I_F,MAX

dI_F/dt = 200 A/μs

T_j= 175 °C

Diode Forward Voltage

Reverse Current

V_F

I_R

µA

Total Capacitive Charge

Switching Time

Q_C

t_s

V_R= 800 V

V_R= 400 V

< 10

V_R= 800 V

V_R= 1 V, f = 1 MHz, T_j= 25 °C

V_R= 800 V, f = 1 MHz, T_j= 25 °C

118

Total Capacitance

Thermal / Mechanical Characteristics

Thermal Resistance, Junction - Case

R_thJC

3.86

°C/W

Feb 2018 Rev1.1

http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/

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