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G8053-512R PDF预览

G8053-512R

更新时间: 2024-02-27 05:07:03
品牌 Logo 应用领域
HAMAMATSU 时钟传感器换能器
页数 文件大小 规格书
4页 251K
描述
CMOS Sensor, 512 Horiz pixels, 1 Vert pixels, 1.26-4.40V, Rectangular, Through Hole Mount

G8053-512R 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.62阵列类型:LINEAR
主体宽度:25.4 mm主体高度:4.35 mm
主体长度或直径:38.1 mm水平像素:512
主时钟:4 MHz安装特点:THROUGH HOLE MOUNT
最高工作温度:70 °C最低工作温度:-40 °C
输出范围:1.26-4.40V输出类型:DIGITAL VOLTAGE
封装形状/形式:RECTANGULAR像素大小:25X500 µm
电源:5 V传感器/换能器类型:IMAGE SENSOR,CMOS
子类别:CCD Image Sensors最大供电电压:5.1 V
最小供电电压:4.9 V表面贴装:NO
端接类型:SOLDER垂直像素:1
Base Number Matches:1

G8053-512R 数据手册

 浏览型号G8053-512R的Datasheet PDF文件第2页浏览型号G8053-512R的Datasheet PDF文件第3页浏览型号G8053-512R的Datasheet PDF文件第4页 
I M A G E S E N S O R  
InGaAs linear image sensor  
G8050 to G8053 series  
Image sensor for DWDM wavelength monitor  
G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These  
linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,  
a CDS circuit, an offset compensation circuit, a shift register and a timing generator. These sensors deliver high sensitivity and stable operation in  
the near infrared spectral range. The package is hermetically sealed for high reliability and the window has an anti-reflective coating for efficient  
light detection.  
Signal processing circuits on the CMOS chip allow selecting a feedback capacitance (Cf) of 10 pF or 0.5 pF by supplying an external voltage. The  
image sensor operates over a wide dynamic range when Cf=10 pF and delivers high gain when Cf=0.5 pF.  
Features  
Applications  
DWDM wavelength monitor  
Optical spectrum analyzer  
Wide dynamic range  
Low noise and low dark current  
Selectable gain  
Anti-saturation circuit  
CDS circuit *1  
Offset compensation circuit  
Simple operation (by built-in timing generator) *2  
High resolution: 25 µm pitch (512 ch)  
Low cross-talk  
256 ch: 1 video line  
512 ch: 2 video lines  
Selection guide  
Number of Pixel pitch  
Pixel size  
[µm (H) × µm (V)]  
Spectral response range Defective  
Type No.  
Cooling  
pixels  
(µm)  
(µm)  
pixel  
G8050-256R  
G8050-256S  
G8051-512R  
G8051-512S  
G8052-256R  
G8052-256S  
G8053-512R  
G8053-512S  
Non-cooled  
One-stage TE-cooled  
Non-cooled  
0.9 to 1.7 (25 °C)  
0.9 to 1.67 (-10 °C)  
0.9 to 1.7 (25 °C)  
0.9 to 1.67 (-10 °C)  
0.9 to 1.7 (25 °C)  
0.9 to 1.67 (-10 °C)  
0.9 to 1.7 (25 °C)  
0.9 to 1.67 (-10 °C)  
256  
50  
50 × 250  
25 × 250  
50 × 500  
25 × 500  
512  
256  
512  
25  
50  
25  
One-stage TE-cooled  
Non-cooled  
One-stage TE-cooled  
Non-cooled  
0
One-stage TE-cooled  
*1: CDS (Correlated Double Sampling) circuit  
Spectral response  
(Typ.)  
1.0  
0.5  
0
A major source of noise in charge amplifiers is the reset noise gen-  
erated when the integration capacitance is reset. A CDS circuit greatly  
reduces this reset noise by holding the signal immediately after re-  
set to find the noise differential.  
T=25 ˚C  
T= -10 ˚C  
*2: Timing generator  
Different signal timings must be properly set in order to operate a  
shift register. In conventional image sensor operation, external PLDs  
(Programmable Logic Devices) are used to input the required timing  
signals. However, G8050 to G8053 series image sensors internally  
generate all timing signals on the CMOS chip just by supplying CLK  
and RESET pulses. This makes it simple to set the timings.  
0.5  
1.0  
1.5  
2.0  
WAVELENGTH (µm)  
KMIRB0011EA  
PRELIMINARY DATA  
Jan. 2001  

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