Datasheet > G67150

G67150

更新时间： 2024-11-16 03:38:47

品牌	Logo	应用领域
HAMAMATSU		光电二极管光电二极管
页数	文件大小	规格书
2页	108K
描述
InGaAs PIN photodiode array

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中文翻译

获取价格

数据手册

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G67150 数据手册

P H O T O D I O D E

InGaAs PIN photodiode array

G7150/G7151-16

16-element array

Features

Applications

16-element array

Near Infrared (NIR) spectrophotometer

For simple measurement

■ General ratings

Parameter

Package

G7150-16

0.45 × 1 (× 16 elements)

G7151-16

DIP

Unit

Active area

0.08 × 0.2 (× 16 elements)

■ Absolute maximum ratings (Ta=25 °C)

Parameter

Reverse voltage

Symbol

Value

Unit

Operating temperature

Storage temperature

* No condensation

Topr

Tstg

-25 to +70 *

°C

■ Electrical and optical characteristics (Ta=25 °C, per 1 element)

G7150-16

G7151-16

Parameter

Symbol

Condition

Unit

Min.

Typ.

0.9 to 1.7

1.55

Max.

Min.

Typ.

0.9 to 1.7

1.55

Max.

Spectral response range

Peak sensitivity wavelength

µm

λp

0.8

0.85

0.9

0.95

0.8

0.85

0.9

0.95

0.2

λ=1.3 µm

λ=1.55 µm

VR=1 V

VR=1 V, RL=50 Ω

λ=1.3 µm, -3 dB

VR=1 V, f=1 MHz

Photo sensitivity

Dark current

A/W

Cut-off frequency

300

MHz

Terminal capacitance

Shunt resistance

Detectivity

100

5 × 10¹²

2 × 10^-14

1000

5 × 10¹²

3 × 10^-15

MΩ

cm·Hz^1/2/W

W/Hz^1/2

Rsh VR=10 mV

λ=λp

NEP

Noise equivalent power

G7150/G7151-16 may be damaged by Electro Static Discharge, etc. Be carefull when using G7150/G7151-16.

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