Datasheet > G6402

G6402

更新时间： 2024-11-21 03:38:43

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	381K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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G6402 数据手册

Pb Free Plating Product

ISSUED DATE :2005/01/17

REVISED DATE :2005/03/22B

GTM

CORPORATION

BVDSS

DS(ON)

-20V

65mΩ

G6402

-4.2A

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description

The G6402 provides the designer with the best combination of fast switching, low on-resistance and

cost-effectiveness.

The G6402 is universally preferred for all commercial-industrial surface mount applications and suited for low

voltage applications such as DC/DC converters.

Features

ԦUltra Low R_DS(ON)

ԦFast Switching

Applications

ԦPower Management in Notebook Computer

ԦPortable Equipment

ԦBattery Powered System.

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

2.70

2.40

1.40

0.35

1.00

1.30

0.20

1.15

10̓

0.10

0.40

0.85

0̓

0.45

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

-20

Unit

Gate-Source Voltage

V_GS

W/ć

f12

-4.2

-3.4

-10

1.38

0.01

Continuous Drain Current³

Pulsed Drain Current^1,2

Power Dissipation

I_D@T

=25к

=70к

I_DM

P_D@T

A=25к

Linear Derating Factor

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-a

Ratings

Unit

ć/W

Thermal Resistance Junction-ambient³Max.

G6402

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