Datasheet > G12180-003A

G12180-003A

更新时间： 2024-02-25 14:22:23

品牌	Logo	应用领域
HAMAMATSU		/
页数	文件大小	规格书
4页	230K
描述
Optoelectronic Device,

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技术参数
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G12180-003A 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.58	Base Number Matches：	1

G12180-003A 数据手册

InGaAs PIN photodiodes

G12180 series

Photosensitive area from ϕ0.3 mm to ϕ5 mm

InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of

InGaAs PIN photodiodes with photosensitive area from ϕ0.3 mm to ϕ5 mm.

Features

Applications

Laser monitors

Low noise, low dark current

Low terminal capacitance

Optical power meters

Laser diode life test

Large photosensitive area

Various photosensitive area sizes available

NIR (near infrared) photometry

Optical communications

Speciﬁcations/Absolute maximum ratings

Absolute maximum ratings

Operating Storage

temperature temperature

Dimensional

outline/

Photosensitive

area

Reverse

voltage

VR max

(V)

Type no.

Package

TO-18

Cooling

Soldering

conditions

Window

Topr

Tstg

material*¹

(mm)

ϕ0.3

ϕ0.5

ϕ1

ϕ2

ϕ3

(°C)

G12180-003A

G12180-005A

G12180-010A

G12180-020A

G12180-030A

G12180-050A

(1)/K

260 °C

or less,

within 10 s

-40 to +100 -55 to +125

Non-cooled

(2)/K

(3)/K

TO-5

TO-8

ϕ5

*1: K: borosilicate glass with anti-reﬂective coating (optimized for 1.55 μm peak)

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Cutoff

frequency

VR=5 V

RL=50 Ω

-3 dB

Peak

Spectral sensi-

response tivity

Terminal

capacitance

VR=5 V

f=1 MHz

Noize

equivalent

power

NEP

Dark

current

Shunt

resistance

Rsh

Temper-

ature

coefﬁcient

of dark

current

∆TID

Photosensitivity

Detectivity

D^*

range

wave-

length

λp

λ=λp

Type no.

VR=5 V

VR=10 mV

λ=λp

1.3 μm

λ=λp

Min. Typ. Min. Typ. Typ. Max.

Min. Typ. Typ. Max. Min. Typ. Min.

Typ.

Max.

(μm) (μm) (A/W) (A/W) (A/W) (A/W) (nA) (nA)

(MHz) (MHz) (pF) (pF) (M

7.5 200 1000

20 80 400

Ω) (MΩ)

(cm·Hz^1/2/W) (cm·Hz^1/2/W) (W/Hz^1/2

)

(W/Hz^1/2

)

4.2 10^-151.2 10^-14

G12180-003A

G12180-005A

G12180-010A

G12180-020A

G12180-030A

G12180-050A

*2: VR=1 V

0.1 0.5

0.15 0.75

450 600

10^-151.9 10^-14

160 200 15

1.4 10^-143.8 10^-14

0.8

55 120 25 125

2.4 × 10¹²6.3 × 10¹²

0.9 to 1.7 1.55 0.8 0.9 0.9 1.1

1.09

2.8 10^-147.5 10^-14

1.5*²7.5*²

4*³13*³250

800

1500

7000

6.5 30

1.3 6.5

4.4 10^-141.1 10^-13

2.5*²12.5

5*²25*²

2.5*

7*³450

3*³1000

10^-141.9 10^-13

0.5

× ×

*3: VR=1 V, f=1 MHz

www.hamamatsu.com

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与G12180-003A相关器件

型号	品牌	获取价格	描述	数据表
G12180-005A	HAMAMATSU	获取价格	InGaAs PIN photodiodes
G12180-010A	HAMAMATSU	获取价格	Optoelectronic Device,
G12180-020A	HAMAMATSU	获取价格	Optoelectronic Device,
G12180-030A	HAMAMATSU	获取价格	InGaAs PIN photodiodes
G12180-050A	HAMAMATSU	获取价格	InGaAs PIN photodiodes
G12181_15	HAMAMATSU	获取价格	InGaAs PIN photodiodes
G12182_15	HAMAMATSU	获取价格	InGaAs PIN photodiodes
G12182-003K	HAMAMATSU	获取价格	PIN Photodiode, TO-18, 3 PIN
G12182-005K	HAMAMATSU	获取价格	PIN Photodiode, TO-18, 3 PIN
G12182-105K	HAMAMATSU	获取价格	PIN Photodiode, TO-8, 6 PIN

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