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FXT753STOB PDF预览

FXT753STOB

更新时间: 2024-11-23 19:28:23
品牌 Logo 应用领域
捷特科 - ZETEX 开关晶体管
页数 文件大小 规格书
1页 42K
描述
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

FXT753STOB 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:IN-LINE, R-PSIP-W3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.18最大集电极电流 (IC):2 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):25JESD-30 代码:R-PSIP-W3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.5 VBase Number Matches:1

FXT753STOB 数据手册

  
PNP SILICON PLANAR  
FXT753  
MEDIUM POWER TRANSISTOR  
ISSUE 1 – FEB 94  
FEATURES  
*
*
*
100 Volt VCEO  
2 Amp continuous current  
Ptot= 1 Watt  
APPLICATIONS  
*
*
*
Lamp, relay or solenoid drivers  
Audio circuits  
B
C
E
Replacement of TO126 and TO220 devices  
REFER TO ZTX753 FOR GRAPHS  
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-120  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-100  
V
-5  
V
Peak Pulse Current  
-6  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
-2  
1
A
Ptot  
W
°C  
Tj:Tstg  
-55 to +200  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT  
V
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-120  
-100  
-5  
IC=-100µA, IE=0  
Collector-Emitter  
Breakdown Voltage  
V
V
IC=-10mA, IB=0*  
Emitter-Base  
Breakdown Voltage  
IE=-100µA, IC=0  
Collector Cut-Off  
Current  
-0.1  
-10  
VCB=-100V, IE=0  
VCB=-100V, T =100°C  
amb  
µA  
µA  
Emitter Cut-Off Current  
IEBO  
-0.1  
VEB=-4V, IC=0  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.17  
-0.30  
-0.3  
-0.5  
V
V
IC=-1A, IB=-100mA*  
IC=-2A, IB=-200mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
-0.90  
-1.25  
V
IC=-1A, IB=-100mA*  
Base-Emitter Turn-On  
Voltage  
-0.8  
-1.0  
V
IC=-1A, VCE=-2V*  
Static Forward Current  
Transfer Ratio  
70  
100  
55  
200  
200  
170  
55  
IC=-50mA, VCE=-2V*  
IC=-500mA, VCE=-2V*  
IC=-1A, VCE=-2V*  
300  
30  
25  
IC=-2A, VCE=-2V*  
Transition  
Frequency  
fT  
100  
140  
MHz  
pF  
IC=-100mA, VCE=-5V  
f=100MHz  
Output Capacitance  
Cobo  
VCB=-10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3-58  

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